onsemi PowerTrench Type P-Channel MOSFET 5.8A 20V Enhancement 6-Pin SOT-23 FDC608PZ

onsemi FDC608PZ PowerTrench Type P-Channel MOSFET is designed as a high-performance semiconductor device optimized for switching and power management applications. It supports a continuous drain current of 5.8 A and a maximum drain-source voltage of 20 V, making it suitable for low-voltage, high-efficiency circuits.

This device uses an enhancement mode channel and incorporates a shielded-gate structure that provides a significant reduction in figure of merit, enabling improved system efficiency and power density. The MOSFET provides a low typical gate charge of 17 nC, which supports faster switching and reduced power losses, making it ideal for synchronous rectification and other power conversion circuits.

With a compact 6-pin SOT-23 surface-mount package (length 3 mm, width 1.7 mm, height 1 mm), it fits well in space-constrained applications. The device can dissipate up to 1.6 W of power and functions reliably within a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage of -12 V to +12 V allows flexible control voltages. Its inherent soft body diode minimizes the need for additional snubber circuits, improving circuit reliability and efficiency. A forward voltage of -0.7 V ensures low conduction losses during operation.

Manufactured in the Philippines, this PowerTrench MOSFET adheres to industry standards for quality and performance. Typical applications include industrial power management, consumer electronics, battery management, and automotive electronic circuits requiring efficient P-channel MOSFET switching.

This MOSFET features an enhancement mode with a shielded-gate structure for low figure of merit. Packaging in 6-Pin SOT-23 supports surface mount technology for compact circuit design. Maximum power dissipation is rated at 1.6 W, suitable for moderate power applications.

Typical gate charge is 17 nC, enabling fast switching speeds and minimized losses. Operating temperature range from -55°C up to 150°C ensures robust performance in diverse environments. Maximum gate-source voltage of -12 V to +12 V allows a wide control voltage range.

Physical dimensions are compact, with length 3 mm, width 1.7 mm, and height 1 mm. Forward voltage drop of -0.7 V enhances efficiency in synchronous rectification circuits. Manufactured in the Philippines, consistent with onsemi’s quality standards.

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