onsemi Isolated PowerTrench 2 Dual N-Channel and P-Channel MOSFET 3.8 A 20 V 6-Pin MicroFET FDME1034CZT

onsemi FDME1034CZT Isolated PowerTrench 2 dual N-channel and P-channel MOSFET is a high-performance enhancement-mode transistor designed for efficient power switching in electronic circuits. It supports a maximum continuous drain current of 3.8 A and can withstand drain-source voltages up to 20 V. Packaged in a compact 6-pin MicroFET surface mount package measuring 1.6 mm by 1.6 mm by 0.5 mm, it is suitable for space-constrained applications.

This MOSFET features a shielded-gate structure technology reducing gate charge and improving switching speeds, which is ideal for synchronous rectification in AC/DC power supplies and power management applications. Its low maximum drain-source resistance of 530 milliohms minimizes conduction losses, thus enhancing overall system efficiency.

The device operates reliably across a wide temperature range from -55°C to 150°C and supports maximum power dissipation of 1.4 W. Its isolated transistor configuration with dual N and P channels integrated on a single chip provides compact and efficient power switching solutions.

With a maximum gate-source voltage of -8 V to +8 V and a typical forward voltage of 0.7 V, the FDME1034CZT is optimized for minimal switching losses and soft body diode performance, which can reduce the need for additional snubber circuits.

This MOSFET is ideal for use in industrial electronics, power supply circuits, and other applications requiring efficient dual-channel switching devices. The small package, combined with high current capability and advanced PowerTrench technology, supports increased system power density and performance.

This device features an enhancement-mode channel type that provides efficient switching performance. The low maximum drain-source resistance of 530 milliohms improves power efficiency. It supports a maximum power dissipation of 1.4 W and operates between -55°C to 150°C.

The package provides isolated transistor configuration with a compact size of 1.6 mm by 1.6 mm by 0.5 mm. The MOSFET incorporates a shielded-gate structure for reduced gate charge and enhanced switching speed. Suitable for surface mount applications requiring dual N and P channel MOSFETs for synchronous rectification.

The device has a maximum gate-source voltage rating of -8 V to +8 V and forward voltage of 0.7 V for optimized conduction. Contains two transistor elements per chip to deliver high efficiency in power management circuits.

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