onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET FDME1034CZT

onsemi FDME1034CZT Isolated PowerTrench 2 Type N and Type P-Channel MOSFET is engineered as a pair of dual MOSFETs in a single 6-pin MicroFET package designed for surface mount technology applications. It features a maximum continuous drain current of 3.8 amperes and can withstand up to 20 volts drain-source voltage ensuring robust operation in various power switching circuits.

Constructed with PowerTrench® technology, these MOSFETs combine small gate charge and soft reverse recovery body diode characteristics allowing fast switching with reduced power losses, enhancing overall system efficiency and power density. The shielded-gate structure balances charge to achieve an improved figure of merit and better switching performance compared to previous generations.

The isolated transistor configuration includes both N-channel and P-channel devices on the same chip, enabling complementary switching arrangements. Its low forward voltage (0.7 V) and moderate power dissipation (1.4 W) make it ideal for synchronous rectification in AC/DC power supplies and other power management applications.

Physical dimensions of 1.6 mm x 1.6 mm x 0.5 mm facilitate compact circuit design. Operating temperature range from -55°C to 150°C supports reliability in demanding industrial and commercial environments. The device is not certified for automotive use but is broadly applicable in electronic components for power and signal modulation.

Key performance parameters include a maximum gate-source voltage range from -8 to +8 V and a low typical gate charge of 3 nC enabling responsive gate control and energy-efficient switching. The maximum drain-source resistance of 530 mΩ helps limit conduction losses in circuits.

onsemi’s PowerTrench MOSFET series provides advanced power switching solutions suited for industrial, electronic manufacturing, HVAC, and general electronics applications requiring efficient, reliable power transistors with dual-channel capabilities.

This MOSFET features PowerTrench® 2 technology for efficient switching performance. The device has a package type of 6-pin MicroFET facilitating easy surface mounting. Maximum power dissipation is rated at 1.4 W, suitable for moderate power applications.

It supports a maximum gate-source voltage of -8 to +8 V with low gate charge of 3 nC for fast switching. Operates reliably in a wide temperature range from -55°C to 150°C. Its isolated transistor configuration incorporates dual N and P channel MOSFETs on one chip.

The device exhibits a maximum drain-source resistance of 530 mΩ improving conduction efficiency. Dimensions are compact, measuring 1.6 mm in length and width and 0.5 mm in height. Designed without automotive standard certification, suitable for general electronic power and signal switching.

Explore our broad range of semiconductor MOSFETs and power transistors on EnvMart to find compatible components for your power management and electronic design projects.