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Infineon HEXFET N-Channel MOSFET 280 A 40 V TO-220 Package 3-Pin IRF2804PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRF2804PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 280A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Provides rugged N-channel enhancement mode operation for efficient switching.
- Features a TO-220 through-hole mounting package with 3 pins for easy PCB integration.
- Offers a maximum power dissipation of 330 watts enabling robust performance in demanding circuits.
- Operates reliably in a wide temperature range from -55°C to 175°C.
- Maximum gate-source voltage rating is ±20 volts for safe drive conditions.
- Has a low maximum drain-source resistance of 2 milliohms for minimal conduction losses.
- Typical gate charge of 160 nC allows quick switching in motor control and synchronous rectification applications.
- Measures 10.67 mm length, 4.83 mm width, and 9.02 mm height for compact physical footprint.
Product Description
Infineon's IRF2804PBF is a HEXFET N-Channel MOSFET transistor built for high efficiency and durability in power electronic applications. This device supports a maximum continuous drain current of 280 A and can withstand a maximum drain-source voltage of 40 V, making it suitable for high-power motor control and synchronous rectification in AC-DC power supplies.
The transistor comes in a robust TO-220 package with through-hole mounting and 3 pins, facilitating secure and reliable installation on printed circuit boards. The MOSFET operates in enhancement mode with a maximum gate-source voltage of ±20 V, ensuring efficient switching with minimal power loss.
Designed for heavy-duty performance, the device has a maximum power dissipation rating of 330 W and functions across a wide thermal range from -55°C to 175°C. Its low maximum drain-source resistance (Rds(on)) of 2 milliohms reduces conduction losses, while the typical gate charge of 160 nC enables rapid switching.
The physical dimensions of 10.67 mm length, 4.83 mm width, and 9.02 mm height allow compact design integration. The forward voltage drop is typically 1.3 V, contributing to the overall efficiency.
This MOSFET is ideal for applications including motor control, power supplies, and other industrial electronics requiring rugged, high-current switches. Infineon's HEXFET technology assures reliable operation and optimal performance in demanding environments.
Rugged N-Channel MOSFET with enhancement mode functionality. High continuous drain current of 280 A for demanding load conditions. Low on-resistance of 2 mΩ reduces power loss and heat generation. TO-220 3-pin package for easy mounting and cooling.
Wide operation temperature range supports industrial applications. High power dissipation capacity of 330 W. Typical gate charge supports efficient switching. Compact form factor for space-limited designs. Explore EnvMart’s comprehensive MOSFET and semiconductor collection for advanced electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 280 A, making it suitable for high-power applications.
The maximum drain-source voltage rating for this MOSFET is 40 V, allowing it to operate effectively in various circuits.
It has a maximum power dissipation capacity of 330 W, which supports robust performance in demanding applications.
The physical dimensions of this model are 10.67 mm in length, 4.83 mm in width, and 9.02 mm in height.
The maximum gate-source voltage rating for this unit is ±20 V, ensuring safe operation under various conditions.
The maximum drain-source resistance (Rds(on)) is 2 milliohms, which helps minimize conduction losses.
The typical gate charge for the IRF2804PBF is 160 nC, facilitating quick switching in applications like motor control.
This model features a TO-220 package with through-hole mounting, allowing for easy integration onto PCBs.
It operates reliably in a wide temperature range from -55°C to 175°C, suitable for various industrial applications.
This MOSFET is ideal for applications including motor control, power supplies, and other industrial electronics requiring high-current switches.
The forward voltage drop is typically 1.3 V, contributing to the overall efficiency in circuit applications.
This model features an N-channel configuration, which is common for enhancement mode MOSFETs.
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