Infineon CoolMOS Type N-Channel MOSFET, 22 A, 700 V, 3-Pin TO-220 IPP65R110CFD7XKSA1

Infineon IPP65R110CFD7XKSA1 CoolMOS Type N-Channel MOSFET is engineered for high power resonant topologies requiring excellent efficiency and reliability. This 3-pin TO-220 packaged MOSFET allows continuous drain currents up to 22 A and supports a maximum drain-source voltage of 700 V, providing robustness in demanding industrial environments.

The integrated fast body diode enhances switching performance and reduces losses, while the device's low drain-source resistance of 110 mΩ supports improved efficiency in power conversion applications. Its thermal capabilities allow operation from -55°C to 150°C, making it suitable for harsh temperature conditions.

The compact physical dimensions (9.45 mm height, 10.36 mm length, and 4.57 mm width) facilitate integration into various electronic assemblies. Typical gate charge is 41 nC at specified gate-source voltage, optimizing switching characteristics.

This MOSFET is widely used in industrial applications such as server power supplies, telecommunications infrastructure, solar inverters, and electric vehicle charging stations where high efficiency and reliable high-power switching are crucial.

Additional benefits include hard-commutation ruggedness and extra safety margin for designs requiring increased bus voltage. Its power dissipation rating of 114 W supports sustained high power operation.

Designed for industrial power electronics and switching applications. High efficiency due to low Rds(on) and integrated body diode. Robust thermal performance enables use in high-temperature environments. Optimized for resonant and switch-mode power supplies.

Long operational life expected in demanding industrial conditions. Explore related semiconductor and MOSFET products on EnvMart for comprehensive solutions in your industrial and electronic component needs.