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Vishay N-Channel Power MOSFET 60 V, 2.3 A, Enhancement Mode, 3-Pin SOT-23 SI2308BDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2308BDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2308BDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.192Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.66W |
| Typical Gate Charge Qg @ Vgs | 2.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for surface mounting on PCBs with SOT-23 package style.
- Offers maximum continuous drain current of 2.3 A for efficient switching.
- Maximum drain-source voltage rating is 60 V, suitable for various low-voltage power applications.
- Features low drain-source resistance of 0.192 Ω to minimize power loss.
- Enhanced device reliability with operating temperature range from -55 °C up to 150 °C.
- Typical gate charge of 2.3 nC ensures fast switching performance.
- Meets IEC 61249-2-21 industry standards for quality and safety.
- Forward voltage drop of 1.2 V at rated current.
Product Description
Vishay SI2308BDS-T1-GE3 is a high-quality N-Channel Power MOSFET designed for efficient power switching and amplification in electronic circuits. Featuring a compact 3-Pin SOT-23 surface-mount package, this device offers a continuous drain current rating of 2.3 A and a maximum drain-source voltage of 60 V, making it suitable for low to medium voltage power applications.
The MOSFET operates in enhancement mode, providing reliable switching with a low on-resistance of 0.192 Ω that reduces conduction losses and improves energy efficiency. It features a maximum power dissipation rating of 1.66 W, allowing it to operate effectively within the specified thermal limits.
Its robust operating temperature range from -55 °C to 150 °C makes it adaptable to a wide range of industrial, manufacturing, and consumer electronics environments. The device complies with IEC 61249-2-21 standards, ensuring quality and safety for semiconductor components.
Typical gate charge of 2.3 nC allows for fast and efficient switching control vital in power management circuits. The MOSFET’s forward voltage drop of 1.2 V contributes to improved overall device efficiency.
Surface-mount SOT-23 package suitable for automated PCB assembly. Enhanced mode N-Channel operation for reliable switching. Continuous drain current of 2.3 A for power applications. Drain-source voltage up to 60 V for versatile use cases.
Low drain-source resistance minimizing power losses. Wide operating temperature from -55 °C to 150 °C. IEC 61249-2-21 compliant for industrial standards. Forward voltage drop of 1.2 V at rated current.
This Vishay SI2308BDS-T1-GE3 Power MOSFET is ideal for use in electronic components manufacturing, power supply design, industrial automation control systems, and PCB power switching modules, providing dependable performance and energy efficiency.
Explore a broad range of semiconductor components and Power MOSFETs in the Electronics & Electricals category on EnvMart to find components suited for your technical specifications and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.3 A, making it suitable for various power applications.
The maximum drain-source voltage rating is 60 V, allowing for versatile use in low to medium voltage applications.
The dimensions of the SI2308BDS-T1-GE3 are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge is 2.3 nC, which ensures fast switching performance in power management circuits.
This model operates effectively within a temperature range of -55 °C to 150 °C, making it adaptable to various environments.
The forward voltage drop at rated current is 1.2 V, contributing to improved overall device efficiency.
The SI2308BDS-T1-GE3 uses a surface-mount SOT-23 package, suitable for automated PCB assembly.
The maximum power dissipation rating for this model is 1.66 W, allowing it to operate within specified thermal limits.
This model complies with IEC 61249-2-21 standards, ensuring quality and safety for semiconductor components.
The SI2308BDS-T1-GE3 features an N-channel configuration, which is suitable for enhancement mode operation.
The maximum drain-source resistance is 0.192 Ω, which helps minimize power loss during operation.
The maximum gate-source voltage for this model is -20 V to +20 V, providing flexibility in control applications.
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