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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | IRFIB6N60APBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.75Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
| N-Channel MOSFET Transistor, 5.5 A, 600 V, 3-Pin Vishay IRFIB6N60ABrand | Vishay |
Vishay's IRFIB6N60APBF is a high-performance N-Channel Power MOSFET designed for efficient power switching applications. This enhancement-mode transistor supports a maximum continuous drain current of 5.5 A and a drain-source voltage of 600 V, making it suitable for industrial power management and electronic control circuits.
The device is housed in a TO-220FP package with 3 pins, intended for through-hole mounting, providing excellent thermal dissipation and mechanical robustness. Operating temperatures range from -55° C to 150° C, allowing reliable use in harsh environments including industrial and automotive electronics.
With a low drain-source resistance (Rds) of 0.75 Ω and a typical gate charge of 49 nC, the MOSFET achieves efficient switching with minimal power losses. The maximum gate-source voltage is rated at ±30 V, providing flexibility in gate drive designs.
This MOSFET complies with RoHS standards, facilitating environmentally responsible electronics design. The compact dimensions (9.8 mm height, 10.63 mm length, and 4.83 mm width) enable integration into various PCB layouts without occupying excessive space.
Compact 3-pin TO-220FP package supports reliable through-hole mounting. Maximum continuous drain current of 5.5 A suitable for moderate power applications. 600 V maximum drain-source voltage enables high-voltage circuit designs.
Low resistance of 0.75 Ω minimizes conduction losses and improves efficiency. Wide operating temperature range from -55° C to 150° C ensures versatility. Typical gate charge of 49 nC provides optimized switching characteristics.
Maximum gate-source voltage ±30 V supports robust gate control. Forward voltage of 1.5 V reduces on-state power loss. RoHS compliant ensuring environment-friendly manufacturing. Precise dimensions for compact PCB assembly with reliable heat dissipation.
This Vishay IRFIB6N60APBF MOSFET is ideal for use in industrial electronics, power supplies, motor controls, HVAC systems, and other applications where efficient high-voltage switching is critical. Explore the wide range of semiconductor devices at EnvMart for your industrial and manufacturing needs.
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