Vishay N-Channel Power MOSFET 58.1 A 80 V 8-Pin PowerPAK 1212-8S Surface Mount SiSS588DN-T1-GE3

Vishay SiSS588DN-T1-GE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications requiring efficient power switching and high current capacity. It supports a maximum continuous drain current of 58.1 A and withstands voltages up to 80 V. The device is housed in an 8-pin PowerPAK 1212-8S surface mount package, offering a compact footprint of 3.3 mm by 3.3 mm suitable for space-constrained designs.

This MOSFET features a very low drain-source resistance (Rds) of 0.008 Ω, which significantly reduces conduction losses and improves overall efficiency in power management systems. Its typical gate charge of 14.2 nC allows for rapid switching, making it ideal for high-frequency operations.

With a maximum power dissipation rating of 56.8 W and a wide operating temperature range from -55°C to 150°C, the SiSS588DN-T1-GE3 offers robustness and reliability for industrial and commercial electronic circuits. The maximum gate-source voltage of 20 V provides protection to the gate terminal, ensuring device longevity.

Applications of this MOSFET include synchronous rectification, primary side switching in power supplies, DC/DC converters, OR-ing and hot swap switching, motor drive controls, and battery management systems. It complies with RoHS environmental standards, supporting safe and sustainable electronic manufacturing.

Supports maximum continuous drain current of 58.1 A. Maximum drain-source voltage of 80 V. Low drain-source resistance of 0.008 Ω for efficiency. Compact 8-pin PowerPAK 1212-8S surface mount package. Typical gate charge of 14.2 nC for fast switching.

Maximum power dissipation of 56.8 W. Operating temperature from -55°C to 150°C. Maximum gate-source voltage of ±20 V for gate protection. RoHS compliant for environmental safety. Suitable for industrial, commercial, and automotive electronic applications.

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