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Infineon N-Channel MOSFET 100 V 44 A SuperSO8 8-Pin Surface Mount BSC0803LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC0803LSATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 14.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This enhancement mode MOSFET supports a maximum power dissipation of 52 watts.
- It provides a low drain-source resistance of 14.6 milliohms for efficient conduction.
- The device operates reliably across a temperature range of -55°C to 150°C.
- Its small footprint measures 5.49 mm length, 6.35 mm width, and 1.1 mm height.
- The MOSFET is RoHS-compliant, halogen-free, and features lead-free plating.
- It is optimized for high performance switched-mode power supplies with 100% avalanche testing.
- The product is suited for power delivery applications including USB power delivery and adapter designs.
Product Description
Infineon BSC0803LSATMA1 is a high-performance N-channel enhancement mode MOSFET designed for power delivery in electronic circuits.
Operating with a maximum drain-source voltage of 100 V and continuous drain current of 44 A, this device is tailored to meet demanding applications such as USB Power Delivery and adapter power supplies.
Encapsulated in a compact SuperSO8 5 x 6 mm surface mount package with 8 pins, the MOSFET combines efficient conduction with excellent thermal management. The device offers a low drain-source resistance (14.6 mΩ), which enhances efficiency by reducing conduction losses in switching applications.
It sustains a maximum power dissipation of 52 W and operates reliably under temperatures ranging from -55°C up to 150°C, making it suitable for industrial and commercial electronics environments.
The typical gate charge of 7.6 nC and forward voltage of 1.1 V support fast switching and minimal signal loss.
This MOSFET undergoes 100% avalanche testing and complies with environmental standards including RoHS and halogen-free IEC61249-2-21 certification, ensuring safe and sustainable use.
This enhancement mode MOSFET supports a maximum power dissipation of 52 watts. It provides a low drain-source resistance of 14.6 milliohms for efficient conduction. The device operates reliably across a temperature range of -55°C to 150°C.
Its small footprint measures 5.49 mm length, 6.35 mm width, and 1.1 mm height. The MOSFET is RoHS-compliant, halogen-free, and features lead-free plating. It is optimized for high performance switched-mode power supplies with 100% avalanche testing.
The product is suited for power delivery applications including USB power delivery and adapter designs. This part is widely applicable in industrial, consumer electronics, and power management system manufacturing. Explore more Infineon semiconductors and discrete components at EnvMart for reliable electronic circuit solutions.
Explore more products in our Discrete Semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 44 A.
It can handle a maximum drain-source voltage of 100 V.
This MOSFET supports a maximum power dissipation of 52 W.
It operates reliably across a temperature range of -55°C to 150°C.
The drain-source resistance is 14.6 milliohms.
It is optimized for high performance switched-mode power supplies, including USB power delivery and adapter designs.
The typical gate charge is 7.6 nC.
The maximum gate-source voltage is 20 V.
This model features an N-channel type.
Yes, it is RoHS-compliant and halogen-free, meeting IEC61249-2-21 certification.
The country of origin for this MOSFET is India.
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