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Infineon N-Channel MOSFET 100 V 44 A SuperSO8 8-Pin Surface Mount BSC0803LSATMA1

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Infineon N-Channel MOSFET 100 V 44 A SuperSO8 8-Pin Surface Mount BSC0803LSATMA1

Name: Infineon N-Channel MOSFET 100 V 44 A SuperSO8 8-Pin Surface Mount BSC0803LSATMA1
Brand: Infineon
SKU: 112604

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Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	5.49mm
Model	BSC0803LSATMA1
Width	6.35mm
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	150°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	44A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	14.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	52W
Typical Gate Charge Qg @ Vgs	7.6nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

This enhancement mode MOSFET supports a maximum power dissipation of 52 watts.
It provides a low drain-source resistance of 14.6 milliohms for efficient conduction.
The device operates reliably across a temperature range of -55°C to 150°C.
Its small footprint measures 5.49 mm length, 6.35 mm width, and 1.1 mm height.
The MOSFET is RoHS-compliant, halogen-free, and features lead-free plating.
It is optimized for high performance switched-mode power supplies with 100% avalanche testing.
The product is suited for power delivery applications including USB power delivery and adapter designs.

Product Description

Infineon BSC0803LSATMA1 is a high-performance N-channel enhancement mode MOSFET designed for power delivery in electronic circuits.

Operating with a maximum drain-source voltage of 100 V and continuous drain current of 44 A, this device is tailored to meet demanding applications such as USB Power Delivery and adapter power supplies.

Encapsulated in a compact SuperSO8 5 x 6 mm surface mount package with 8 pins, the MOSFET combines efficient conduction with excellent thermal management. The device offers a low drain-source resistance (14.6 mΩ), which enhances efficiency by reducing conduction losses in switching applications.

It sustains a maximum power dissipation of 52 W and operates reliably under temperatures ranging from -55°C up to 150°C, making it suitable for industrial and commercial electronics environments.

The typical gate charge of 7.6 nC and forward voltage of 1.1 V support fast switching and minimal signal loss.

This MOSFET undergoes 100% avalanche testing and complies with environmental standards including RoHS and halogen-free IEC61249-2-21 certification, ensuring safe and sustainable use.

This enhancement mode MOSFET supports a maximum power dissipation of 52 watts. It provides a low drain-source resistance of 14.6 milliohms for efficient conduction. The device operates reliably across a temperature range of -55°C to 150°C.

Its small footprint measures 5.49 mm length, 6.35 mm width, and 1.1 mm height. The MOSFET is RoHS-compliant, halogen-free, and features lead-free plating. It is optimized for high performance switched-mode power supplies with 100% avalanche testing.

The product is suited for power delivery applications including USB power delivery and adapter designs. This part is widely applicable in industrial, consumer electronics, and power management system manufacturing. Explore more Infineon semiconductors and discrete components at EnvMart for reliable electronic circuit solutions.

Explore more products in our Discrete Semiconductors category.