World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi PowerTrench N-Channel MOSFET, 94 A, 30 V Enhancement Mode, 3-Pin TO-252 Package FDD8896

Free Delivery in India | Lowest Global Shipping Charges

onsemi PowerTrench N-Channel MOSFET, 94 A, 30 V Enhancement Mode, 3-Pin TO-252 Package FDD8896

Name: onsemi PowerTrench N-Channel MOSFET, 94 A, 30 V Enhancement Mode, 3-Pin TO-252 Package FDD8896
Brand: onsemi
SKU: 129189



Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin	Philippines
Brand	onsemi
Height	2.39mm
Length	6.73mm
Model	FDD8896
Width	6.22mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	94A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	9mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	80W
Typical Gate Charge Qg @ Vgs	46nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Enhancement mode channel ensures precise switching and control.
Maximum power dissipation of 80 watts allows efficient thermal management.
Low drain-source resistance of 9 milliohms optimizes conduction losses.
Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
Compact dimensions with 6.73 mm length and 6.22 mm width provide a small footprint for space-sensitive applications.
Maximum gate charge of 46 nanocoulombs reduces switching losses and improves efficiency.
Maximum gate-source voltage of ±20 volts protects device integrity.
Surface mount TO-252 package facilitates automated PCB assembly.

Product Description

onsemi FDD8896 PowerTrench N-Channel MOSFET, featuring a maximum continuous drain current of 94 A and maximum drain-source voltage of 30 V, is designed for efficient power management in electronic circuits. This enhancement mode MOSFET comes in a 3-pin TO-252 surface mount package ideal for industrial, automotive, and power electronics applications.

The device supports a maximum power dissipation of 80 W, allowing it to handle significant loads with effective heat dissipation. The low on-resistance of 9 milliohms minimizes conduction losses, enhancing overall system efficiency and performance.

Operating over a broad temperature range from -55°C to 175°C, the MOSFET is suitable for rugged environments, making it reliable for automotive and industrial use cases. Its typical gate charge of 46 nanocoulombs ensures faster switching speeds and reduced power losses during operation.

The package dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height offer a compact footprint to support dense PCB layouts and automated assembly processes. The TO-252 form factor and surface mount type enable easy integration into modern electronic devices.

This MOSFET lacks specific automotive standard certifications but maintains stringent quality from its manufacturing origin in the Philippines. It is widely applicable in power conversion, motor control, and switching power supplies within industrial, automotive, commercial, and laboratory environments.

Enhancement mode channel for precise switching control. Maximum drain current rating of 94 A for high power applications. Maximum drain-source voltage of 30 V suited for medium voltage circuits. Low Rds(on) of 9 mΩ reduces conduction power losses.

Wide temperature range operation from -55°C to 175°C for durability. Compact TO-252 package supports automated PCB mounting. Typical gate charge (Qg) of 46 nC enables efficient switching. Maximum gate-source voltage of ±20 V ensures device protection.

Manufactured in Philippines ensuring quality standards. Explore onsemi MOSFETs and other semiconductor solutions in the Discrete Semiconductors category on EnvMart for reliable power management components.