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Vishay Isolated TrenchFET Dual Type P and Type N-Channel MOSFET, 5.3 A, 60 V, Enhancement Mode, 8-Pin SOIC SI4559ADY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4559ADY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 72mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.4W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Designed with an 8-pin SOIC package for surface mounting.
- Features enhancement mode operation with low drain-source resistance of 72 mΩ.
- Maximum power dissipation rating of 3.4 W ensuring efficient thermal performance.
- Operates in a temperature range from -55°C to 150°C.
- Typical gate charge is 13 nC at Vgs, allowing fast switching.
- Maximum gate-source voltage tolerance is -20 V to +20 V.
- Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
- Configured as isolated dual N/P-Channel MOSFET.
Product Description
Vishay SI4559ADY-T1-GE3 is a high-performance isolated dual TrenchFET MOSFET featuring both Type P and Type N channels suitable for a wide range of electronic applications. It exhibits a maximum continuous drain current of 5.3 A and a maximum drain-source voltage of 60 V, operating in enhancement mode to provide optimal switching efficiency.
The MOSFET comes in a compact 8-pin Small Outline IC (SOIC) package designed for surface mounting on PCB assemblies. This component boasts a low maximum drain-source resistance of 72 milliohms, contributing to low conduction losses and improved power dissipation capabilities rated at 3.4 watts. It supports typical gate charge of 13 nanocoulombs at gate-source voltage, enabling fast turn-on and turn-off characteristics essential for high-frequency switching circuits.
Engineered for reliability, the device supports operating temperatures from -55°C to 150°C and withstands gate-source voltages ranging from -20 V to +20 V, ensuring robustness under demanding environmental conditions. The physical dimensions are compact with a length of 5 mm, width of 4 mm, and height of 1.5 mm, allowing flexible integration into complex electronic systems.
This dual transistor configuration is ideal for industrial, power management, and electronic control applications in sectors such as manufacturing, telecommunications, and power supply design. It is manufactured in China and supplied as a new product meeting rigorous semiconductor quality standards.
Designed with an 8-pin SOIC package for surface mounting. Features enhancement mode operation with low drain-source resistance of 72 mΩ. Maximum power dissipation rating of 3.4 W ensuring efficient thermal performance. Operates in a temperature range from -55°C to 150°C.
Typical gate charge is 13 nC at Vgs, allowing fast switching. Maximum gate-source voltage tolerance is -20 V to +20 V. Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height. Configured as isolated dual N/P-Channel MOSFET.
Manufactured in China as a new condition semiconductor device. Explore more high-quality semiconductors and discrete electronic components on EnvMart for your industrial and commercial needs.
Explore more products in our Discrete Semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI4559ADY-T1-GE3 is 5.3 A.
This model has a maximum drain-source voltage rating of 60 V.
The maximum drain-source resistance for this unit is 72 mΩ, contributing to low conduction losses.
The maximum power dissipation rating is 3.4 W, ensuring efficient thermal performance.
The typical gate charge at gate-source voltage is 13 nC.
It operates within a temperature range from -55°C to 150°C.
This model comes in an 8-pin SOIC package designed for surface mounting.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It features both Type P and Type N channels in a dual configuration.
The maximum gate-source voltage tolerance is -20 V to +20 V.
This dual transistor configuration is suitable for industrial, power management, and electronic control applications.
The Vishay SI4559ADY-T1-GE3 is manufactured in China.
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