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Infineon Type N-Channel IGBT 30 A 1350 V TO-247 Through Hole 3-Pin IHW30N135R5XKSA1

Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.21mm
Length 21.1mm
Model IHW30N135R5XKSA1
Width 16.13mm
Mount Type Through Hole
Series IHW30N135R5
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals JESD-022
Pin Count 3
Maximum Continuous Collector Current Ic 30A
Maximum Collector Emitter Voltage Vceo 1350V
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
Channel Type Type N
Maximum Power Dissipation Pd 330W
Maximum Gate Emitter Voltage VGEO ±20 ±25 V
Number of Transistors 1

Key Features

  • Equipped with a 3-pin TO-247 through-hole package for easy mounting.
  • Supports maximum power dissipation of 330 W ensuring efficient thermal management.
  • Maximum collector-emitter saturation voltage of 1.65 V reduces conduction losses.
  • Operates reliably in a wide temperature range from -40 °C to 175 °C.
  • Gate-emitter voltage tolerance of ±20 V allows robust gate drive swings.
  • Suitable for high-voltage motor drives and industrial inverter designs.
  • Complies with JESD-022 moisture sensitivity standards for durability.
  • Robust construction meets demanding industrial and power conversion requirements.

Product Description

Infineon IHW30N135R5XKSA1 is a high-voltage Type N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power conversion, control, and switching applications. It features a 30 A maximum continuous collector current and a collector-emitter voltage rating up to 1350 V, housed in a 3-pin TO-247 through-hole package. This transistor is optimized for handling substantial power loads efficiently with a maximum power dissipation of 330 W, supporting operation in harsh environments with temperatures ranging from -40 °C to 175 °C.

The device’s maximal collector-emitter saturation voltage is 1.65 V, minimizing conduction losses and improving overall system efficiency. The gate-emitter voltage rating of ±20 V ensures robust and flexible gate drive capabilities, accommodating a range of control signals commonly found in power electronics.

This IGBT is ideal for high-voltage motor drive stages, industrial inverter and converter circuits, and power supplies where through-hole mounting and reliable thermal performance are essential. It also meets JESD-022 moisture sensitivity classification, making it suitable for demanding industrial conditions requiring stable long-term operation.

3-pin TO-247 package facilitates secure through-hole mounting. High power dissipation capacity up to 330 W for sustained heavy-duty use. Wide temperature range operation from -40 °C to 175 °C ensures reliability. ±20 V gate-emitter voltage rating for resilient gate control.

Low saturation voltage of 1.65 V enhances conduction efficiency. Compliant with JESD-022 standards for moisture sensitivity handling. Perfect for industrial motor drives, inverters, and power converters. Designed specifically for industrial power electronics and fast switching applications.

This product is categorized under Discrete Semiconductors and is suitable for industrial, manufacturing, and power electronics sectors requiring dependable semiconductor switching components. Explore more semiconductor products and components in our Electronics & Electricals category at EnvMart.

Infineon Type N-Channel IGBT 30 A 1350 V TO-247 Through Hole 3-Pin IHW30N135R5XKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 30 A.

The collector-emitter voltage rating is up to 1350 V.

It supports a maximum power dissipation of 330 W.

This model operates reliably in a wide temperature range from -40 °C to 175 °C.

The gate-emitter voltage tolerance is ±20 V.

The maximum collector-emitter saturation voltage is 1.65 V.

It uses a through-hole mounting type in a 3-pin TO-247 package.

It complies with JESD-022 moisture sensitivity standards.

The dimensions are 21.1 mm in length, 16.13 mm in width, and 5.21 mm in height.

It is suitable for high-voltage motor drives, industrial inverters, and power converters.

This IGBT has a pin count of 3.

It features a Type N channel.

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