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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 21.1mm |
| Model | IHW30N135R5XKSA1 |
| Width | 16.13mm |
| Mount Type | Through Hole |
| Series | IHW30N135R5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JESD-022 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 1350V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 330W |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V |
| Number of Transistors | 1 |
Infineon IHW30N135R5XKSA1 is a high-voltage Type N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power conversion, control, and switching applications. It features a 30 A maximum continuous collector current and a collector-emitter voltage rating up to 1350 V, housed in a 3-pin TO-247 through-hole package. This transistor is optimized for handling substantial power loads efficiently with a maximum power dissipation of 330 W, supporting operation in harsh environments with temperatures ranging from -40 °C to 175 °C.
The device’s maximal collector-emitter saturation voltage is 1.65 V, minimizing conduction losses and improving overall system efficiency. The gate-emitter voltage rating of ±20 V ensures robust and flexible gate drive capabilities, accommodating a range of control signals commonly found in power electronics.
This IGBT is ideal for high-voltage motor drive stages, industrial inverter and converter circuits, and power supplies where through-hole mounting and reliable thermal performance are essential. It also meets JESD-022 moisture sensitivity classification, making it suitable for demanding industrial conditions requiring stable long-term operation.
3-pin TO-247 package facilitates secure through-hole mounting. High power dissipation capacity up to 330 W for sustained heavy-duty use. Wide temperature range operation from -40 °C to 175 °C ensures reliability. ±20 V gate-emitter voltage rating for resilient gate control.
Low saturation voltage of 1.65 V enhances conduction efficiency. Compliant with JESD-022 standards for moisture sensitivity handling. Perfect for industrial motor drives, inverters, and power converters. Designed specifically for industrial power electronics and fast switching applications.
This product is categorized under Discrete Semiconductors and is suitable for industrial, manufacturing, and power electronics sectors requiring dependable semiconductor switching components. Explore more semiconductor products and components in our Electronics & Electricals category at EnvMart.
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