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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.1mm |
| Length | 6.1mm |
| Model | ISC027N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 192A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.24mΩ |
| Maximum Power Dissipation Pd | 245W |
| Typical Gate Charge Qg @ Vgs | 91nC |
| Maximum Gate Source Voltage Vgs | 20V |
Infineon ISC027N10NM6ATMA1 is a Type N-Channel MOSFET designed for high-current power conversion and motor-drive environments. It supports a maximum continuous drain current of 192 A and a drain-source voltage rating of 100 V, making it suitable for demanding applications requiring robust switching capabilities.
This MOSFET features a low maximum on-resistance rating of 2.24 milliohms, which significantly reduces conduction losses and enhances efficiency. With a maximum power dissipation of 245 W, it can handle sustained power loads reliably.
The device’s typical gate charge is 91 nC at Vgs, optimizing the balance between drive requirements and switching speed. The gate-source voltage rating of 20 V allows a broad gate drive voltage range for flexible operation.
Encased in an 8-pin TDSON surface-mount package, the component is designed for compact assembly on printed circuit boards. It operates reliably within an extended temperature range from -55 °C to 175 °C, making it suitable for high-temperature industrial, automotive, and commercial applications.
This MOSFET is ideal for use in high-current DC-DC converters, motor drives, battery management systems, and traction inverters where low Rds(on) and high power dissipation are critical. Its surface-mount package and operational characteristics ensure compatibility with compact and efficient power electronic designs.
Supports 192 A continuous drain current. Handles up to 100 V drain-source voltage. Low Rds(on) of 2.24 milliohms for efficiency. Maximum power dissipation rated at 245 W. Typical gate charge of 91 nC for optimal switching.
Operates from -55 °C up to 175 °C. 8-pin TDSON package for surface mounting. Gate-source voltage rating of 20 V. Applicable in motor drives, power converters, and battery management.
This product is part of the ISC series from Infineon, renowned for robust power semiconductors suitable for industrial, automotive, laboratory, and commercial electronic applications. Explore more semiconductor and MOSFET products on EnvMart for your project requirements.
Explore more products in our Discrete Semiconductors category.
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