Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon ISC Type N-Channel MOSFET 192 A 100 V 8-Pin TDSON ISC027N10NM6ATMA1

Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.1mm
Length 6.1mm
Model ISC027N10NM6ATMA1
Width 1.1mm
Mount Type Surface
Series ISC
Maximum Operating Temperature 175°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 192A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 2.24mΩ
Maximum Power Dissipation Pd 245W
Typical Gate Charge Qg @ Vgs 91nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Supports a maximum continuous drain current of 192 A for heavy-load applications.
  • Provides a drain to source voltage rating of 100 V to enable high-voltage switching.
  • Features low on-resistance of 2.24 milliohms to minimize conduction losses.
  • Designed for power dissipation up to 245 W allowing sustained usage at high power.
  • Typical gate charge of 91 nC balances driving effort and switching speed.
  • Operates reliably within a temperature range from -55 °C to 175 °C for harsh environments.
  • Utilizes an 8-pin TDSON surface-mount package suitable for compact assembly.
  • Gate-source voltage rating of 20 V offers wide gate drive headroom.

Product Description

Infineon ISC027N10NM6ATMA1 is a Type N-Channel MOSFET designed for high-current power conversion and motor-drive environments. It supports a maximum continuous drain current of 192 A and a drain-source voltage rating of 100 V, making it suitable for demanding applications requiring robust switching capabilities.

This MOSFET features a low maximum on-resistance rating of 2.24 milliohms, which significantly reduces conduction losses and enhances efficiency. With a maximum power dissipation of 245 W, it can handle sustained power loads reliably.

The device’s typical gate charge is 91 nC at Vgs, optimizing the balance between drive requirements and switching speed. The gate-source voltage rating of 20 V allows a broad gate drive voltage range for flexible operation.

Encased in an 8-pin TDSON surface-mount package, the component is designed for compact assembly on printed circuit boards. It operates reliably within an extended temperature range from -55 °C to 175 °C, making it suitable for high-temperature industrial, automotive, and commercial applications.

This MOSFET is ideal for use in high-current DC-DC converters, motor drives, battery management systems, and traction inverters where low Rds(on) and high power dissipation are critical. Its surface-mount package and operational characteristics ensure compatibility with compact and efficient power electronic designs.

Supports 192 A continuous drain current. Handles up to 100 V drain-source voltage. Low Rds(on) of 2.24 milliohms for efficiency. Maximum power dissipation rated at 245 W. Typical gate charge of 91 nC for optimal switching.

Operates from -55 °C up to 175 °C. 8-pin TDSON package for surface mounting. Gate-source voltage rating of 20 V. Applicable in motor drives, power converters, and battery management.

This product is part of the ISC series from Infineon, renowned for robust power semiconductors suitable for industrial, automotive, laboratory, and commercial electronic applications. Explore more semiconductor and MOSFET products on EnvMart for your project requirements.

Explore more products in our Discrete Semiconductors category.

Infineon ISC Type N-Channel MOSFET 192 A 100 V 8-Pin TDSON ISC027N10NM6ATMA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

It supports a maximum continuous drain current of 192 A, making it suitable for heavy-load applications.

The drain-source voltage rating is 100 V, enabling high-voltage switching capabilities.

It features a low maximum on-resistance of 2.24 milliohms, which minimizes conduction losses.

The maximum power dissipation is rated at 245 W, allowing for sustained usage at high power.

The typical gate charge is 91 nC, which balances driving effort and switching speed.

It operates reliably within a temperature range from -55 °C to 175 °C, suitable for harsh environments.

It utilizes an 8-pin TDSON surface-mount package, designed for compact assembly.

The gate-source voltage rating is 20 V, providing a wide gate drive headroom.

The dimensions are 6.1 mm in length, 1.1 mm in width, and 5.1 mm in height.

It is ideal for high-current DC-DC converters, motor drives, battery management systems, and traction inverters.

This model has a pin count of 8, allowing for easy integration into various circuits.

It is part of the ISC series from Infineon, known for robust power semiconductors.

Related Products

Other Products from this brand

Recently Viewed Products

$2.73
$2.65 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$2.73
$2.65
Tax included