Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement Mode, 3-Pin I2PAK IRF5210LPBF

Infineon IRF5210LPBF HEXFET Type P-Channel MOSFET is designed for high efficiency and reliable power switching applications. With a continuous drain current capability of 38 A and a drain-source voltage maximum of 100 V, this MOSFET is ideal for use in industrial, automotive, and power management circuits requiring robust performance and durability.

This device features an enhanced channel mode, improving conduction efficiency and reducing switching losses. It is housed in an I2PAK (TO-262) package, supporting through-hole mounting and three-pin configuration, which facilitates integration into various PCB layouts and thermal designs.

Operating comfortably in temperatures from -55°C up to 150°C, the IRF5210LPBF supports demanding environmental conditions. Its high power dissipation rating up to 170 W enables it to handle substantial load currents and thermal stress efficiently.

The typical gate charge of 150 nC at gate-source voltage ensures rapid switching, making it suitable for switching regulators, power supplies, and motor control applications. Its gate-source voltage tolerance from -20 V to +20 V provides safety margins for switching and control circuits.

With a low maximum drain-source resistance of 60 milliohms, this MOSFET contributes to minimized conduction losses, increasing system efficiency, and reducing heat generation. The product is lead-free compliant, meeting modern environmental safety standards.

Supports a maximum continuous drain current of 38 amperes. Maximum drain-source voltage is 100 volts ensuring robust switching. Enhanced channel mode for efficient power handling. Package type is I2PAK (TO-262) with through hole mounting and 3 pins.

Maximum power dissipation of 170 watts supports high load operations. Operating temperature range from -55°C to 150°C for wide application conditions. Typical gate charge of 150 nC at gate-source voltage, providing fast switching.

Maximum gate-source voltage tolerance of -20 to +20 volts. Low drain-source resistance of 60 milliohms ensures minimal conduction losses. Lead-free compliant, suitable for modern environmental standards.

This MOSFET is suitable for applications in industrial power management, automotive electronics, and various switching and amplification circuits requiring high efficiency and reliable performance.

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