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onsemi Type P-Channel IGBT, 75 A, 650 V, 4-Pin TO-247 Through Hole Package FGH75T65SHDTL4
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Model | FGH75T65SHDTL4 |
| Mount Type | Through Hole |
| Series | Field Stop 3rd generation |
| Energy Rating | 160mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Channel Type | Type P |
| Maximum Power Dissipation Pd | 455W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Utilizes 3rd generation field stop technology for low conduction and switching losses.
- Maximum continuous collector current of 75 A for high current capability.
- Rated maximum collector-emitter voltage of 650 V for robust power applications.
- Supports maximum power dissipation of 455 W for reliable energy handling.
- Achieves fast switching speeds up to 1 MHz for efficient power conversion.
- Operates within a wide temperature range of -55°C to 175°C junction temperature.
- Features high input impedance and tight parameter distribution for consistent operation.
- Manufactured in China and compliant with RoHS environmental standards.
Product Description
onsemi FGH75T65SHDTL4 is a Type P-Channel Insulated Gate Bipolar Transistor (IGBT) with a 4-pin TO-247 package designed for through-hole mounting. This 3rd generation field stop IGBT delivers excellent performance in demanding industrial, laboratory, renewable energy, and power electronics applications such as solar inverters, uninterruptible power supplies (UPS), welders, telecommunications equipment, energy storage systems (ESS), and power factor correction (PFC) devices.
The device supports a maximum continuous collector current (Ic) of 75 amperes and can withstand collector-emitter voltages (Vceo) up to 650 volts. It dissipates a maximum power of 455 watts, with a typical saturation voltage (VceSAT) of 1.6 V at 75 A, helping to reduce conduction losses and improve energy efficiency.
The FGH75T65SHDTL4 boasts a maximum gate-emitter voltage rating of 20 V and features fast switching capabilities up to 1 MHz, suitable for applications requiring rapid switching cycles. Its wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Additionally, it has a high input impedance and positive temperature coefficient enabling easy paralleling of devices.
This IGBT is RoHS compliant and built with advanced field stop technology to enhance performance and energy efficiency. The package type TO-247 supports through-hole mounting for ease of integration in power electronics assemblies.
3rd generation field stop IGBT technology for low conduction and switching losses. Maximum continuous collector current of 75 A with high current capability. Operates at a maximum collector-emitter voltage of 650 V ensuring high voltage endurance.
455 W maximum power dissipation for robust energy handling. Fast switching speed of 1 MHz suitable for power conversion systems. Wide operating temperature range from -55°C to 175°C junction temperature. High input impedance and tightly controlled parameters for consistent performance.
RoHS compliant and manufactured in China adhering to environmental and quality standards.
This onsemi FGH75T65SHDTL4 IGBT is well suited for industrial, manufacturing, automotive, renewable energy, HVAC, and laboratory applications requiring durable and efficient power semiconductor devices. It is ideal for solar power inverters, UPS, welding machines, telecom infrastructure, and power factor correction circuits.
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Frequently Asked Questions
The maximum continuous collector current of this model is 75 A.
It has a maximum collector-emitter voltage rating of 650 V.
The maximum power dissipation for this unit is 455 W.
It operates within a wide temperature range from -55°C to 175°C.
This model is designed for through-hole mounting, utilizing a TO-247 package type.
The maximum gate-emitter voltage rating is 20 V.
It utilizes 3rd generation field stop technology for low conduction and switching losses.
The typical saturation voltage at 75 A is 1.6 V.
Yes, it is RoHS compliant, adhering to environmental standards.
It features high input impedance, which facilitates easy paralleling of devices.
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