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onsemi Bipolar Transistor NPN 200 mA 40 V 16-Pin SOIC MMPQ3904

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onsemi Bipolar Transistor NPN 200 mA 40 V 16-Pin SOIC MMPQ3904

Name: onsemi Bipolar Transistor NPN 200 mA 40 V 16-Pin SOIC MMPQ3904
Brand: onsemi
SKU: 106962

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Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	10mm
Model	MMPQ3904
Width	6.2mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	16
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V
Maximum Power Dissipation Pd	1W
Maximum DC Collector Current Idc	200mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	250MHz

Key Features

Maximum DC collector current of 200 mA ensures moderate current handling capacity.
Maximum collector-emitter voltage rating of 40 V suited for low voltage switching applications.
16-pin SOIC surface mount package offers compact and reliable PCB mounting.
Isolated transistor configuration for versatile circuit designs.
Maximum power dissipation of 1 Watt supports moderate thermal loads.
Operating temperature range from -55°C to 150°C ensures robust performance in various environments.
High transition frequency of 250 MHz suitable for high-speed switching.
Collector-base voltage rating of 60 V and emitter-base voltage of 6 V.

Product Description

onsemi MMPQ3904 Bipolar Transistor is a high-performance NPN transistor designed for switching and amplification applications. It features a maximum DC collector current of 200 mA and a maximum collector-emitter voltage of 40 V, making it suitable for various low power electronic circuits.

This transistor is housed in a 16-pin SOIC surface mount package that enables compact PCB designs with reliable mechanical and electrical connections. Its isolated transistor configuration allows it to perform efficiently in complex circuit layouts.

Rated for a maximum power dissipation of 1 Watt, the MMPQ3904 transistor can operate within a wide ambient temperature range from -55°C to 150°C, ensuring durability under demanding thermal conditions.

The device offers a transition frequency of 250 MHz, supporting high-speed electronic switching, along with a minimum DC current gain (hFE) of 30 for effective signal amplification. Maximum collector-base and emitter-base voltages are rated at 60 V and 6 V respectively, complying with common circuit protection requirements.

Physical dimensions are compact with a height of 1 mm, length of 10 mm, and width of 6.2 mm, facilitating integration into densely packed assemblies. Maximum DC collector current of 200 mA. Maximum collector-emitter voltage: 40 V.

Surface mount 16-pin SOIC package. Isolated transistor configuration. Maximum power dissipation of 1 W. Operating temperature range: -55°C to 150°C. High transition frequency: 250 MHz. Minimum DC current gain hFE: 30. Physical dimensions: 10 mm length, 6.2 mm width, 1 mm height.

This transistor is widely used in industrial, manufacturing, and consumer electronic circuits where medium power switching and amplification are required. Its reliable performance and compact packaging make it suitable for automated assembly and high-density PCB designs.

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