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onsemi Bipolar Transistor NPN 200 mA 40 V 16-Pin SOIC MMPQ3904
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 10mm |
| Model | MMPQ3904 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 16 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 200mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 250MHz |
Key Features
- Maximum DC collector current of 200 mA ensures moderate current handling capacity.
- Maximum collector-emitter voltage rating of 40 V suited for low voltage switching applications.
- 16-pin SOIC surface mount package offers compact and reliable PCB mounting.
- Isolated transistor configuration for versatile circuit designs.
- Maximum power dissipation of 1 Watt supports moderate thermal loads.
- Operating temperature range from -55°C to 150°C ensures robust performance in various environments.
- High transition frequency of 250 MHz suitable for high-speed switching.
- Collector-base voltage rating of 60 V and emitter-base voltage of 6 V.
Product Description
onsemi MMPQ3904 Bipolar Transistor is a high-performance NPN transistor designed for switching and amplification applications. It features a maximum DC collector current of 200 mA and a maximum collector-emitter voltage of 40 V, making it suitable for various low power electronic circuits.
This transistor is housed in a 16-pin SOIC surface mount package that enables compact PCB designs with reliable mechanical and electrical connections. Its isolated transistor configuration allows it to perform efficiently in complex circuit layouts.
Rated for a maximum power dissipation of 1 Watt, the MMPQ3904 transistor can operate within a wide ambient temperature range from -55°C to 150°C, ensuring durability under demanding thermal conditions.
The device offers a transition frequency of 250 MHz, supporting high-speed electronic switching, along with a minimum DC current gain (hFE) of 30 for effective signal amplification. Maximum collector-base and emitter-base voltages are rated at 60 V and 6 V respectively, complying with common circuit protection requirements.
Physical dimensions are compact with a height of 1 mm, length of 10 mm, and width of 6.2 mm, facilitating integration into densely packed assemblies. Maximum DC collector current of 200 mA. Maximum collector-emitter voltage: 40 V.
Surface mount 16-pin SOIC package. Isolated transistor configuration. Maximum power dissipation of 1 W. Operating temperature range: -55°C to 150°C. High transition frequency: 250 MHz. Minimum DC current gain hFE: 30. Physical dimensions: 10 mm length, 6.2 mm width, 1 mm height.
This transistor is widely used in industrial, manufacturing, and consumer electronic circuits where medium power switching and amplification are required. Its reliable performance and compact packaging make it suitable for automated assembly and high-density PCB designs.
Explore more semiconductors and discrete transistors in the Electronics & Electricals category at EnvMart for your diverse application needs.
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Frequently Asked Questions
The maximum DC collector current for this model is 200 mA.
The maximum collector-emitter voltage rating is 40 V, making it suitable for low voltage switching applications.
It is housed in a 16-pin SOIC surface mount package, allowing for compact PCB designs.
The operating temperature range is from -55°C to 150°C, ensuring performance in various environments.
The high transition frequency of this transistor is 250 MHz, suitable for high-speed switching applications.
The minimum DC current gain (hFE) is rated at 30, which is effective for signal amplification.
The dimensions are 10 mm in length, 6.2 mm in width, and 1 mm in height.
The maximum power dissipation for this model is 1 Watt, supporting moderate thermal loads.
The maximum collector-base voltage is 60 V and the maximum emitter-base voltage is 6 V.
Yes, its compact packaging and reliable connections make it suitable for automated assembly in high-density PCB designs.
The country of origin for this transistor is India.
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