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DiodesZetex Silicon Junction Switching Diode, Single, 2 A Forward Current, 2-Pin SMB Package, 200 V Reverse Voltage ES2D-13-F
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 3.94mm |
| Model | ES2D-13-F |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 50A |
| Maximum Forward Voltage Vf | 920mV |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- This diode features a silicon junction for stable switching performance.
- Maximum forward current rating is 2 amperes providing reliable conduction capacity.
- Designed with a compact 2-pin SMB surface mount package for PCB assembly.
- Maximum peak reverse repetitive voltage is rated at 200 volts for circuit protection.
- Forward voltage drop is 920 millivolts for efficient operation.
- Peak reverse recovery time is 25 nanoseconds to support high-speed switching.
- Operating temperature range is from -55°C to 150°C for versatile environmental use.
Product Description
DiodesZetex ES2D-13-F is a silicon junction Switching Diode designed for efficient and reliable electronic circuit switching applications. Rated for a maximum forward current of 2 A and a peak reverse voltage of 200 V, this diode ensures robust performance in power management and protection tasks.
Its surface mount SMB package with 2 pins facilitates compact PCB mounting, ideal for industrial, manufacturing, automotive, and electronics assembly contexts. The diode’s low forward voltage drop of 920 mV supports reduced power loss and efficient energy usage.
The diode offers a peak reverse recovery time of 25 ns which allows high-speed switching, suitable for power supplies, converters, and switching regulators. It operates reliably across a wide temperature range from -55°C up to 150°C, making it adaptable for harsh environmental conditions.
Manufactured in China, the diode measures 3.94 mm in length and width with a height of 2.3 mm, providing a compact form factor that integrates easily into varied electronic designs.
This diode features a silicon junction for stable switching performance. Maximum forward current rating is 2 amperes providing reliable conduction capacity. Designed with a compact 2-pin SMB surface mount package for PCB assembly.
Maximum peak reverse repetitive voltage is rated at 200 volts for circuit protection. Forward voltage drop is 920 millivolts for efficient operation. Peak reverse recovery time is 25 nanoseconds to support high-speed switching.
Operating temperature range is from -55°C to 150°C for versatile environmental use. Dimensions are precise with length and width of 3.94 mm, and height of 2.3 mm.
This component is suitable for industrial automation, power electronics, telecommunications equipment, and general electronic manufacturing environments. Its robust design ensures long-term reliability in switching and rectifying tasks.
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Frequently Asked Questions
The maximum forward current rating for this diode is 2 amperes.
The peak reverse repetitive voltage is rated at 200 volts.
This model measures 3.94 mm in length and width, with a height of 2.3 mm.
The forward voltage drop is 920 millivolts, which supports efficient operation.
The peak reverse recovery time is 25 nanoseconds, suitable for high-speed switching applications.
The operating temperature range is from -55°C to 150°C, allowing for versatile environmental use.
It is designed in a compact 2-pin SMB surface mount package, facilitating PCB assembly.
The diode configuration is single, which is standard for many switching applications.
The peak non-repetitive forward surge current is rated at 50 amperes.
It is suitable for industrial automation, power electronics, telecommunications equipment, and general electronic manufacturing environments.
This diode is designed for surface mounting, making it ideal for compact electronic designs.
The diode is manufactured in China.
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