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Nexperia Silicon Junction Switching Diode Single 250mA 2-Pin DO-34 125V BAS45A,113

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Nexperia Silicon Junction Switching Diode Single 250mA 2-Pin DO-34 125V BAS45A,113

Name: Nexperia Silicon Junction Switching Diode Single 250mA 2-Pin DO-34 125V BAS45A,113
Brand: Nexperia
SKU: 122662
Price: 0.18 USD
Availability: InStock

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Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.6mm
Length	3.04mm
Model	BAS45A,113
Width	1.6mm
Mount Type	Through Hole
Series	BAS45A
Maximum Operating Temperature	175°C
Package Type	DO-34
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	300mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	250mA
Maximum Peak Reverse Repetitive Voltage Vrrm	125V
NXP Switching Diode, 200mA 100V, 2-Pin SOD-27 1N4148,113Brand	NXP

Key Features

This diode has a maximum forward current of 250 mA.
It features a 2-pin DO-34 package for through-hole mounting.
The device supports up to 125 V peak reverse voltage.
Its maximum power dissipation is rated at 300 mW.
It offers a fast peak reverse recovery time of 4 nanoseconds.
Operates reliably between -65°C and 175°C maximum temperature.
The diode has a maximum forward voltage of 1 V ensuring efficient operation.
Compact size with dimensions approximately 3.04 mm length and 1.6 mm width and height.

Product Description

Nexperia BAS45A,113 Silicon Junction Switching Diode is a high-performance discrete semiconductor designed for fast switching applications. Its single diode configuration with a 2-pin DO-34 through-hole package makes it suitable for a variety of PCB mounting scenarios in industrial, commercial, and laboratory electronics.

The diode supports a maximum forward current of 250 mA and a peak reverse repetitive voltage of 125 V, enabling reliable performance in signal switching and protection circuits. It dissipates up to 300 mW of power and features a peak reverse recovery time of just 4 nanoseconds, enhancing switching efficiency and minimizing signal loss.

Temperature resilience is excellent, with operational capability from -65°C to a maximum of 175°C, suitable for harsh industrial environments. The maximum forward voltage of 1 V contributes to low power losses during operation. Physically, its compact dimensions at 3.04 mm length and 1.6 mm width and height save PCB space.

This silicon junction diode supports customized high-density circuit designs with additional benefits such as low leakage current and high voltage tolerance, making it ideal for communication devices, automotive electronics, and power management modules.

This diode has a maximum forward current of 250 mA. It features a 2-pin DO-34 package for through-hole mounting. The device supports up to 125 V peak reverse voltage. Its maximum power dissipation is rated at 300 mW. It offers a fast peak reverse recovery time of 4 nanoseconds.

Operates reliably between -65°C and 175°C maximum temperature. The diode has a maximum forward voltage of 1 V ensuring efficient operation. Compact size with dimensions approximately 3.04 mm length and 1.6 mm width and height.

Designed for industrial and electronic applications requiring small signal switching. It is suitable for electronics manufacturers, system integrators, and repair technicians in the semiconductor and electronic component sectors.

For more semiconductor and Switching Diode products, browse the EnvMart Electronics & Electricals categories.