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Infineon Silicon Junction Switching Diode 15 A Forward Current, 650 V TO-247 Package IDW15E65D2FKSA1

Category Switching Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 41.42mm
Length 16.13mm
Model IDW15E65D2FKSA1
Width 5.21mm
Mount Type Through Hole
Series IDW15E65D2
Maximum Operating Temperature 175°C
Package Type TO-247
Sub Type Silicon Junction
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Power Dissipation Pd 85.7W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.6V
Peak Reverse Recovery Time trr 30ns
Maximum Forward Current If 15A
Maximum Peak Reverse Repetitive Voltage Vrrm 650V

Key Features

  • Single diode configuration designed for efficient switching applications.
  • Maximum forward current of 15 A enables handling of significant power loads.
  • TO-247 through-hole package with 3 pins for reliable PCB mounting.
  • Peak reverse repetitive voltage rated at 650 V for voltage resilience.
  • Maximum power dissipation of 85.7 W supports high thermal loads.
  • Low peak reverse recovery time of 30 ns reduces switching losses.
  • Operating temperature range from -40°C to 175°C ensures durability in harsh environments.
  • Pb-free lead plating and RoHS compliance promote environmental safety.

Product Description

Infineon IDW15E65D2FKSA1 is a silicon junction switching diode housed in a durable TO-247 package. Designed for industrial and electronic switching applications, this diode delivers a maximum forward current of 15 A and withstands a peak reverse voltage of 650 V, suitable for use in power supplies, converters, and motor control circuits.

The diode's single configuration and through-hole mount type make it easy to integrate on standard PCBs. Its construction optimizes performance at switching frequencies between 40 kHz and 100 kHz, benefiting applications requiring fast switching with minimal losses.

Key technical properties include a peak non-repetitive forward surge current of 100 A, a maximum power dissipation of 85.7 W, and a low peak reverse recovery time of 30 nanoseconds, minimizing turn-on losses and enhancing efficiency in boost switch designs.

With an operating temperature range from -40°C up to 175°C, this diode is robust for industrial environments and demanding thermal conditions. The lead plating is Pb-free and the product complies with RoHS standards, ensuring it meets modern environmental regulations.

Single silicon junction diode configuration. 15 A maximum forward current with 650 V peak reverse voltage. TO-247 package with three pins designed for through-hole mounting. Low reverse recovery time of 30 ns reduces switching losses.

High power dissipation capability of 85.7 W. Wide operating temperature range suitable for industrial applications. Pb-free lead plating and RoHS compliance for environmental safety.

This diode is ideal for industrial automation, power management, consumer electronics, and automotive systems where efficient, high-current switching is required. It supports reliable and efficient circuit designs in semiconductor and electronics manufacturing sectors.

Explore further Switching Diodes and related semiconductor solutions in the Electronics & Electricals category on EnvMart for optimized circuit performance and industrial applications.

Infineon Silicon Junction Switching Diode 15 A Forward Current, 650 V TO-247 Package IDW15E65D2FKSA1
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Frequently Asked Questions

The maximum forward current of this diode is 15 A, allowing it to handle significant power loads in various applications.

This model has a peak reverse repetitive voltage rating of 650 V, providing voltage resilience for demanding applications.

It is housed in a TO-247 package and features a through-hole mounting configuration with three pins for reliable PCB integration.

The diode supports a maximum power dissipation of 85.7 W, which is suitable for high thermal loads in industrial applications.

The operating temperature range for this diode is from -40°C to 175°C, making it suitable for harsh industrial environments.

The peak reverse recovery time is 30 ns, which helps to reduce switching losses in applications requiring fast switching.

It has a peak non-repetitive forward surge current rating of 100 A, allowing it to handle brief surges effectively.

Yes, this diode features Pb-free lead plating and complies with RoHS standards, promoting environmental safety.

The dimensions of this diode are 41.42 mm in height, 16.13 mm in length, and 5.21 mm in width.

This diode uses a single configuration, which is designed for efficient switching applications.

This diode is suitable for industrial automation, power management, consumer electronics, and automotive systems where efficient high-current switching is required.

The maximum forward voltage drop for this model is 1.6 V, which is relevant for calculating power losses in circuit designs.

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