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DiodesZetex Switching Diode Single Silicon Junction 1A 1000V 2-Pin DO-41 PR1007G-T
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 2.72mm |
| Brand | DiodesZetex |
| Height | 2.7mm |
| Length | 5.21mm |
| Model | PR1007G-T |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
Key Features
- Single silicon junction configuration ensures reliable switching performance.
- Maximum forward current of 1 ampere suitable for various power applications.
- 2-pin DO-41 through-hole package for easy PCB mounting.
- Peak reverse recovery time of 500 nanoseconds enhances switching efficiency.
- Wide operating temperature range from -65°C to 150°C for harsh environments.
- Maximum forward voltage of 1.3 volts for efficient conductivity.
- Peak non-repetitive surge current withstand up to 30 amperes.
- Compact dimensions with a length of 5.21 mm and diameter of 2.72 mm.
Product Description
DiodesZetex PR1007G-T is a high-performance switching diode designed for industrial and electronic semiconductor applications. It consists of a single silicon junction capable of handling a maximum forward current of 1 ampere, making it suitable for power regulation and switching circuits.
This diode is packaged in a 2-pin DO-41 through-hole form factor, allowing for straightforward mounting on printed circuit boards. The device supports a peak reverse repetitive voltage of 1000 volts, providing robust protection against voltage surges in various electrical and electronic environments.
Featuring a peak reverse recovery time of 500 nanoseconds, the module proposes quick transition characteristics enabling efficient switching in high-frequency applications. Its temperature tolerance spans from -65°C to 150°C, confirming suitability for demanding industrial conditions.
The diode carries a maximum forward voltage of 1.3 volts and can sustain peak non-repetitive forward surge current of up to 30 amperes, enabling it to handle transient overloads effectively. Its compact dimensions (length 5.21 mm, diameter 2.72 mm, and width 2.7 mm) make it viable for space-constrained applications.
Commonly employed in power supplies, switching regulators, and discrete semiconductor circuits, the PR1007G-T diode offers reliable switching operation across industrial, laboratory, and manufacturing applications.
Single silicon junction configuration ensures reliable switching performance. Maximum forward current of 1 ampere suitable for various power applications. 2-pin DO-41 through-hole package for easy PCB mounting. Peak reverse recovery time of 500 nanoseconds enhances switching efficiency.
Wide operating temperature range from -65°C to 150°C for harsh environments. Maximum forward voltage of 1.3 volts for efficient conductivity. Peak non-repetitive surge current withstand up to 30 amperes. Compact dimensions with a length of 5.21 mm and diameter of 2.72 mm.
Manufactured in China adhering to quality standards. Explore the full range of semiconductor Switching Diodes at EnvMart for advanced electronic component solutions.
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Frequently Asked Questions
The maximum forward current of this diode is 1 ampere, making it suitable for various power applications.
The peak reverse recovery time for the PR1007G-T is 500 nanoseconds, which enhances its switching efficiency.
This diode can withstand a maximum peak reverse repetitive voltage of 1000 volts, providing robust protection against voltage surges.
The diode has a length of 5.21 mm, a diameter of 2.72 mm, and a height of 2.7 mm, making it compact for various applications.
The operating temperature range for the PR1007G-T is from -65°C to 150°C, suitable for harsh environments.
This diode is packaged in a 2-pin DO-41 through-hole package, allowing for easy mounting on printed circuit boards.
The maximum forward voltage for this model is 1.3 volts, which supports efficient conductivity.
The diode can withstand a peak non-repetitive forward surge current of up to 30 amperes, enabling it to handle transient overloads effectively.
This model uses a single silicon junction configuration, ensuring reliable switching performance.
It is commonly employed in power supplies, switching regulators, and discrete semiconductor circuits.
The PR1007G-T diode is manufactured in China, adhering to quality standards.
This diode has a pin count of 2, which is typical for its through-hole package design.
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