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onsemi Silicon Junction, Single Diode, 3 A Forward Current, 800 V Peak Reverse Voltage, 2-Pin DO-41 Package 1N5407G

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 5.3mm
Brand onsemi
Height 9.5mm
Length 9.5mm
Model 1N5407G
Width 5.3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 200A
Maximum Forward Voltage Vf 1V
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 800V

Key Features

  • Single silicon junction diode configuration for high reliability.
  • Maximum forward current rating of 3 amperes.
  • Peak reverse repetitive voltage up to 800 volts for robust performance.
  • Through-hole mount type with compact DO-41 package.
  • Pin count of 2 suitable for rectification applications.
  • Maximum forward voltage drop of 1 V for efficient conduction.
  • Wide operating temperature range from -65°C to 150°C.
  • Capable of withstanding 200 A peak non-repetitive forward surge current.

Product Description

onsemi 1N5407G silicon junction diode is designed for industrial and commercial applications requiring a robust rectifier with high forward current capability of 3 amperes and high peak reverse voltage of 800 volts. It features a two-pin DO-41 through-hole package that is widely used for easy PCB mounting and enhanced thermal dissipation.

This diode is characterized by a maximum forward voltage drop of 1 V and a peak non-repetitive forward surge current of 200 A, making it ideal for power rectification, switching, and protection circuits in electronics and electrical equipment.

The diode operates reliably over an extensive temperature range from -65°C to +150°C, supporting diverse environmental conditions common in industrial, automation, and power supply systems.

Single silicon junction diode configuration for high reliability. Maximum forward current rating of 3 amperes. Rated for 800 volts maximum peak reverse repetitive voltage. DO-41 package type suitable for through-hole mounting.

Compact dimensions: length 9.5 mm, diameter 5.3 mm, height 9.5 mm. Operating temperature range from -65°C to 150°C. Capable of handling 200 A peak non-repetitive forward surge current. No automotive or industrial certification approvals.

This diode is commonly used in power supplies, rectifier units, switching circuits, and other semiconductor applications requiring stable and efficient unidirectional current flow. It fits applications in industrial electronics, power electronic devices, HVAC control systems, manufacturing equipment, and general electronics repair and assembly.

Choose onsemi 1N5407G for reliable, long-lasting silicon diode performance in demanding electrical and electronic environments. Explore more semiconductor products like Switching Diodes and rectifiers on EnvMart for your industrial and electronic component needs.

onsemi Silicon Junction, Single Diode, 3 A Forward Current, 800 V Peak Reverse Voltage, 2-Pin DO-41 Package 1N5407G
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Frequently Asked Questions

The maximum forward current rating of the 1N5407G diode is 3 amperes.

This diode is rated for a peak reverse repetitive voltage of 800 volts.

The 1N5407G comes in a DO-41 package type, suitable for through-hole mounting.

The maximum forward voltage drop for the 1N5407G is 1 volt.

This diode operates reliably over a temperature range from -65°C to +150°C.

The 1N5407G is capable of withstanding a peak non-repetitive forward surge current of 200 amperes.

The dimensions of the 1N5407G are 9.5 mm in length, 5.3 mm in diameter, and 9.5 mm in height.

The 1N5407G diode has a pin count of 2.

This diode is commonly used in power supplies, rectifier units, switching circuits, and various semiconductor applications.

The 1N5407G employs a single silicon junction diode configuration.

The 1N5407G diode is manufactured in India.

This model is suitable for through-hole mounting, which enhances thermal dissipation.

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