Toshiba Switching Diode Common Anode Silicon Junction 300mA 80V SOT-346 3-Pin 1SS181,LF(T

Toshiba 1SS181,LF(T switching diode is a high-speed, silicon junction diode with a common anode configuration, designed for efficient switching in electronic circuits. It is rated for a maximum forward current of 300 mA and a peak reverse voltage of 80 V, housed in a compact SOT-346 (SC-59) 3-pin surface mount package.

This diode supports a maximum power dissipation of 150 mW and can handle a peak surge current of up to 2 A, making it robust for transient electrical loads. The very fast peak reverse recovery time of 4 ns ensures minimal switching delay, suitable for high-frequency applications such as power supply switching, signal rectification, and digital circuits.

The operating temperature range from -55°C to 125°C allows reliable performance in industrial, automotive, and consumer electronics environments. Its physical dimensions of 2.9 mm length, 1.5 mm width, and 1.16 mm height allow for compact circuit board layouts.

Manufactured in Thailand, this diode meets the quality and reliability expectations of Toshiba products, making it a preferred choice for electronic component designers and engineers.

The diode configuration is a common anode type utilizing silicon junction technology. It is designed as a surface mount device with three pins for efficient PCB integration. Maximum forward current rating is 300 mA ensuring suitable current handling for many switching uses.

The voltage specifications including 80 V maximum reverse voltage ensure durability under typical electronics voltages. Fast switching characteristics with 4 ns recovery time suit modern high-speed electronic switching applications.

Compact SOT-346 package supports space-saving in circuit designs. Explore the full range of Toshiba Switching Diodes and other semiconductor components at EnvMart for reliable sourcing and expert support.