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WeEn Semiconductors Co., Ltd Switching Diode Single 8 A 600 V TO-220F BYC8X-600,127

Category Switching Diode Brand WeEn Semiconductors Co., Ltd Condition New

Specifications

Country of Origin India
Brand WeEn Semiconductors Co., Ltd
Height 15.8mm
Length 10.3mm
Model BYC8X-600,127
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220F
Sub Type Silicon Junction
Minimum Operating Temperature -40°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 88A
Maximum Forward Voltage Vf 2.91V
Peak Reverse Recovery Time trr 52ns
Maximum Forward Current If 8A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • The diode features a silicon junction type suitable for various electronic switching applications.
  • It uses a through-hole mount in a durable TO-220F package with 2 pins.
  • The maximum peak reverse recovery time is 52 nanoseconds, ensuring fast switching performance.
  • The device operates within a temperature range from -40°C to 150°C.
  • The peak non-repetitive forward surge current is rated at 88 A for transient conditions.
  • Physical dimensions include a length of 10.3 mm, width of 4.6 mm, and height of 15.8 mm.
  • Maximum forward voltage drop is 2.91 V.

Product Description

WeEn Semiconductors Co., Ltd BYC8X-600,127 is a high-performance single switching diode designed for electronic and power switching applications. It supports a maximum forward current of 8 A and a peak reverse repetitive voltage of 600 V, making it suitable for demanding industrial and commercial electronic circuits.

This silicon junction diode is mounted through the hole on a PCB and housed in a TO-220F package, providing robust mechanical stability and good thermal dissipation for high current loads. It features a peak reverse recovery time of 52 ns, which promotes efficient high-speed switching operations.

The diode operates reliably across a wide temperature range from -40°C to 150°C, meeting the requirements of harsh operating environments in various sectors including automotive electronics, power supplies, and industrial automation systems.

Other electrical characteristics include a maximum forward voltage of 2.91 V and a peak non-repetitive forward surge current of 88 A. The compact dimensions of 10.3 mm length, 4.6 mm width, and 15.8 mm height support flexible design integration in electronic assemblies.

The diode features a silicon junction type suitable for reliable switching. Through-hole mount style eases assembly and durability. Fast recovery time of 52 ns enhances switching efficiency. Wide operating temperature range from -40°C to 150°C suits industrial needs.

High surge current capability of 88 A protects against transient spikes. Standard TO-220F package allows for effective heat dissipation. Compact footprint for integration in space-constrained circuits.

This WeEn Semiconductors Switching Diode is ideal for applications in industrial electronics, power management systems, HVAC controls, and automotive electronics where reliable switching is critical. EnvMart customers can find this diode under the Semiconductor category, featuring the latest technology for efficient power control and signal switching.

WeEn Semiconductors Co., Ltd Switching Diode Single 8 A 600 V TO-220F BYC8X-600,127
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Frequently Asked Questions

The maximum forward current rating of this diode is 8 A.

The peak reverse repetitive voltage for this model is 600 V.

This diode is housed in a TO-220F package.

The maximum operating temperature for this diode is 150°C.

The peak reverse recovery time is 52 nanoseconds.

The maximum forward voltage drop is 2.91 V.

The peak non-repetitive forward surge current is rated at 88 A.

The physical dimensions are 10.3 mm in length, 4.6 mm in width, and 15.8 mm in height.

This diode uses a through-hole mount style.

The minimum operating temperature is -40°C.

This model has a single diode configuration.

This diode is manufactured in India.

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