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WeEn Semiconductors Co., Ltd Diode General Purpose 200 V 20 A 3-Pin TO-220AB BYV32E-200,127
Specifications
| Country of Origin | China |
|---|---|
| Brand | WeEn Semiconductors Co., Ltd |
| Height | 9.4mm |
| Length | 10.3mm |
| Model | BYV32E-200,127 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | BYV32E-200 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 200V |
| Diode Configuration | Common Cathode |
| Rectifier Type | General Purpose |
| Peak Reverse Current Ir | 30μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 137A |
| Maximum Forward Voltage Vf | 1.15V |
| Peak Reverse Recovery Time trr | 25ns |
Key Features
- Designed with a common cathode diode configuration for efficient performance.
- Equipped with a TO-220AB package suitable for through-hole mounting.
- Maximum forward voltage of 1.15 V reduces power loss.
- Supports high surge currents up to 137 A for durability.
- Operates over a wide temperature range from -40°C to 150°C.
- Fast reverse recovery time of 25 ns optimizes switching performance.
- Compact dimensions allow space-efficient circuit designs.
Product Description
WeEn Semiconductors Co., Ltd BYV32E-200,127 general purpose diode is designed for robust electronic applications requiring efficient rectification and switching capabilities. With a peak reverse repetitive voltage (VRRM) of 200 V and a maximum continuous forward current (IF) rating of 20 A, this diode supports high current loads with reliable performance.
The diode's common cathode configuration and 3-pin TO-220AB package allow for straightforward through-hole mounting, making it suitable for various power electronics designs in industrial, consumer electronics, and power management systems.
Other key technical highlights include a maximum forward voltage drop of 1.15 V, which helps minimize power dissipation during operation. The device can withstand peak non-repetitive forward surge currents up to 137 A, ensuring durability during transient events. Additionally, the fast peak reverse recovery time of 25 ns contributes to efficient switching with reduced switching losses.
Operating temperature range from -40°C to 150°C supports use in harsh environments and extended temperature applications. Its compact physical dimensions (length 10.3 mm, height 9.4 mm, width 4.7 mm) facilitate integration into space-constrained assemblies.
This general purpose rectifier diode, manufactured in China, does not include specific automotive approvals but is suitable for a variety of industrial and consumer electronic use cases such as power supplies, motor drives, and voltage regulation circuits.
Designed with a common cathode diode configuration for efficient performance. Equipped with a TO-220AB package suitable for through-hole mounting. Maximum forward voltage of 1.15 V reduces power loss. Supports high surge currents up to 137 A for durability.
Operates over a wide temperature range from -40°C to 150°C. Fast reverse recovery time of 25 ns optimizes switching performance. Compact dimensions allow space-efficient circuit designs. Explore more semiconductors and rectifier diodes from WeEn Semiconductors Co., Ltd at EnvMart for your electronic project and production needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current rating of this diode is 20 A.
The peak reverse repetitive voltage (VRRM) for this model is 200 V.
It is equipped with a TO-220AB package suitable for through-hole mounting.
The maximum forward voltage drop is 1.15 V, which helps reduce power loss during operation.
This diode can withstand peak non-repetitive forward surge currents up to 137 A.
It operates over a wide temperature range from -40°C to 150°C.
The peak reverse recovery time is 25 ns, optimizing its switching performance.
The dimensions are 10.3 mm in length, 9.4 mm in height, and 4.7 mm in width.
This diode features a common cathode configuration.
The peak reverse current is 30 μA.
It is manufactured in China.
This model is suitable for various applications including power supplies, motor drives, and voltage regulation circuits.
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