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WeEn Semiconductors Co., Ltd Bipolar Transistor NPN 12A 700V TO-220 3-Pin PHE13009,127

Specifications

Country of Origin India
Brand WeEn Semiconductors Co., Ltd
Height 4.7mm
Length 10.3mm
Model PHE13009,127
Width 16mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 700V
Minimum DC Current Gain hFE 8
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 700V
Maximum Power Dissipation Pd 80W
Maximum DC Collector Current Idc 12A
Transistor Configuration Single
Maximum Transition Frequency ft 60Hz

Key Features

  • High maximum DC collector current of 12 amperes provides robust power handling capability.
  • Maximum collector emitter voltage rating of 700 volts ensures high voltage tolerance.
  • TO-220 package with 3 pins supports through-hole mount type for reliable mechanical connection.
  • Features NPN transistor polarity with single transistor configuration.
  • Minimum DC current gain (hFE) of 8 ensures adequate amplification.
  • Maximum power dissipation of 80 watts supports efficient heat handling.
  • Operating temperature range from 0°C to 150°C suits various industrial environments.
  • Compact dimensions with length 10.3mm, width 16mm, height 4.7mm optimize PCB space.

Product Description

WeEn Semiconductors Co., Ltd PHE13009,127 is a bipolar NPN transistor designed for power semiconductor applications requiring high current and voltage handling capabilities. It supports a maximum DC collector current of 12 amperes and a maximum collector emitter voltage of 700 volts, making it suitable for demanding industrial electronics and power management tasks.

Encased in a 3-pin TO-220 package with a through-hole mount, this transistor offers durability and ease of integration into existing printed circuit boards (PCBs). It features a single transistor configuration with NPN polarity, ideal for switching and amplification in power circuits.

The transistor sustains a maximum power dissipation rating of 80 watts which ensures effective heat dissipation during operation. It maintains reliable performance within its operating temperature range of 0°C to 150°C, accommodating various environmental conditions encountered in industrial and manufacturing settings.

This device measures 10.3 mm in length, 16 mm in width, and 4.7 mm in height, providing a compact form factor for efficient PCB layout designs. Due to its electrical characteristics, it is commonly used in power regulation, amplification, and discrete semiconductor circuits that require robust current and voltage control.

Applications for this transistor include industrial electronics, power management modules, discrete semiconductor components in manufacturing, HVAC controllers, and other commercial electronic equipment requiring high voltage and current ratings.

High maximum DC collector current of 12 amperes provides robust power handling capability. Maximum collector emitter voltage rating of 700 volts ensures high voltage tolerance. TO-220 package with 3 pins supports through-hole mount type for reliable mechanical connection.

Features NPN transistor polarity with single transistor configuration. Minimum DC current gain (hFE) of 8 ensures adequate amplification. Maximum power dissipation of 80 watts supports efficient heat handling. Operating temperature range from 0°C to 150°C suits various industrial environments.

Compact dimensions with length 10.3mm, width 16mm, height 4.7mm optimize PCB space. Designed for use in power and discrete semiconductor applications requiring high voltage and current. Explore more semiconductor components at EnvMart for comprehensive electronic solutions.

Explore more products in our Bipolar Transistors category.

WeEn Semiconductors Co., Ltd Bipolar Transistor NPN 12A 700V TO-220 3-Pin PHE13009,127
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