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WeEn Semiconductors Co., Ltd General Purpose 200 V 30 A Diode 3-Pin TO-220AB BYV42E-200,127

Specifications

Country of Origin India
Brand WeEn Semiconductors Co., Ltd
Height 9.4mm
Length 10.3mm
Model BYV42E-200,127
Width 4.7mm
Mount Type Through Hole
Series BYV42E-200
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Forward Current If 30A
Peak Reverse Repetitive Voltage Vrrm 200V
Diode Configuration Common Cathode
Rectifier Type General Purpose
Peak Reverse Current Ir 100μA
Peak Non-Repetitive Forward Surge Current Ifsm 160A
Maximum Forward Voltage Vf 1.2V
Peak Reverse Recovery Time trr 28ns
NXP 150V 30A, Dual Silicon Junction Diode, 3-Pin TO-220AB BYV42E-150,127Brand NXP

Key Features

  • Features a common cathode diode configuration with 3 pins for through-hole mounting.
  • Package type is TO-220AB suitable for power applications.
  • Supports a peak non-repetitive forward surge current of 160 A.
  • Maximum forward voltage drop is 1.2 V ensuring efficient conduction.
  • Operating temperature ranges from -40°C to 150°C.
  • Peak reverse current is low at 100 μA, ensuring minimal leakage.
  • Reverse recovery time is fast at 28 ns for high-speed switching applications.
  • Designed primarily for industrial, power electronics, and general semiconductor applications.

Product Description

WeEn Semiconductors Co., Ltd BYV42E-200,127 is a high-performance general purpose diode designed for power electronics and industrial applications. It is rated for a maximum continuous forward current of 30 A and a peak reverse repetitive voltage of 200 V, making it suitable for demanding electrical circuits requiring reliable rectification and switching.

This 3-pin diode comes in a TO-220AB package providing robust mechanical support and effective heat dissipation for high current handling. Its low forward voltage of 1.2 V reduces power loss during conduction. The diode supports a peak non-repetitive forward surge current of 160 A, accommodating short-term current spikes safely.

With an operating temperature range from -40°C to 150°C, this semiconductor component ensures reliable performance in harsh environments and industrial thermal conditions. The diode's peak reverse current is limited to 100 microamperes, reducing leakage currents and enhancing circuit efficiency.

The peak reverse recovery time of 28 nanoseconds enables quick recovery to the off state, which is critical in switching power supplies and fast switching circuits. Dimensions of length 10.3 mm, width 4.7 mm, and height 9.4 mm enable easy integration into PCB layouts with through-hole mounting.

This diode is ideal for applications in industrial power management, consumer electronics, automotive electronics (non-automotive certified), and general semiconductor usage where robust, efficient rectification is necessary.

Features a common cathode diode configuration with 3 pins for through-hole mounting. Package type is TO-220AB suitable for power applications. Supports a peak non-repetitive forward surge current of 160 A. Maximum forward voltage drop is 1.2 V ensuring efficient conduction.

Operating temperature ranges from -40°C to 150°C. Peak reverse current is low at 100 μA, ensuring minimal leakage. Reverse recovery time is fast at 28 ns for high-speed switching applications. Compact physical dimensions support easy PCB integration.

Explore the Electronics & Electricals category at EnvMart for an extensive range of semiconductor components including diodes, transistors, and rectifiers.

Explore more products in our Schottky Diodes & Rectifiers category.

WeEn Semiconductors Co., Ltd General Purpose 200 V 30 A Diode 3-Pin TO-220AB BYV42E-200,127
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Frequently Asked Questions

The maximum continuous forward current rating of this diode is 30 A.

This model has a peak reverse repetitive voltage of 200 V.

The diode comes in a TO-220AB package type, suitable for power applications.

The operating temperature range for this diode is from -40°C to 150°C.

The maximum forward voltage drop is 1.2 V, which ensures efficient conduction.

This diode supports a peak non-repetitive forward surge current of 160 A.

The reverse recovery time is fast at 28 ns, making it suitable for high-speed switching applications.

It has 3 pins and features a common cathode diode configuration for through-hole mounting.

The peak reverse current is limited to 100 μA, which helps in minimizing leakage.

The dimensions are 10.3 mm in length, 4.7 mm in width, and 9.4 mm in height.

This diode is primarily used in industrial power management, consumer electronics, and automotive electronics (non-automotive certified).

The country of origin for this diode is India.

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