WeEn Semiconductors Co., Ltd High Voltage NPN Bipolar Transistor 4A 400V TO-220 PHE13005,127

WeEn Semiconductors Co., Ltd PHE13005,127 is a high voltage NPN bipolar transistor designed for power electronic applications requiring robust current and voltage handling, packaged in a TO-220 through-hole form factor.

This transistor supports a maximum DC collector current of 4 amperes and a collector-emitter voltage of 400 volts, making it suitable for industrial and commercial electronic device designs requiring reliable switching and amplification under high voltage conditions.

The device features a maximum power dissipation of 75 watts and a minimum DC current gain of 10, ensuring efficient operation within demanding thermal and electrical environments. Its maximum operating temperature rating of 150°C ensures durability in harsh conditions.

The transistor includes three pins in a compact TO-220 package measuring 10.3mm in length, 21mm in height, and 4.7mm in width, facilitating easy insertion into circuit boards for power management, amplification, or switching.

Other technical parameters include a maximum collector-base voltage of 700 volts and a maximum emitter-base voltage of 9 volts with a transition frequency of 60Hz, reflecting its application in discrete semiconductor circuits.

High voltage NPN bipolar transistor for power applications. Through-hole 3-pin TO-220 packaging for robust mounting. Supports up to 4A collector current and 400V collector-emitter voltage. Maximum power dissipation rated at 75W enables sustained heavy load operation.

Wide operating temperature range up to 150°C for enhanced reliability. Compact physical dimensions suitable for discrete semiconductor designs. Manufactured in China adhering to quality standards.

This product is ideally suited for industrial, manufacturing, and power management applications, including switching and amplification tasks in electronic circuits, HVAC systems, and laboratory equipment.

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