WeEn Semiconductors Co., Ltd 200 V 20 A General Purpose Diode 3-Pin D2PAK BYV32EB-200,118

WeEn Semiconductors Co., Ltd BYV32EB-200,118 is a high-performance general purpose diode deployed in power semiconductor applications, supporting forward currents up to 20 amperes and reverse voltages up to 200 volts. Packaged in a surface mount TO-263 (D2PAK) with 3 pins, this diode is engineered for reliable rectification and switching in industrial, electronics manufacturing, and power management sectors.

Its low forward voltage drop of 1.15 V minimizes power losses while delivering efficient conduction. The device features a peak reverse recovery time of just 25 ns, making it suitable for fast switching circuits, reducing switching losses and enhancing system efficiency.

The diode can operate safely over a wide temperature range from -40°C to 150°C, accommodating rigorous environmental conditions common in construction electronics, HVAC controls, and automation systems.

The compact dimensions - 10.3 mm in length, 9.4 mm width, and 4.5 mm height - allow for optimized PCB layouts in dense electronic assemblies.

This diode provides a peak non-repetitive forward surge current of 137 A, enabling it to withstand transient surges found in power supply and motor drive applications. The common cathode configuration makes it a versatile choice for rectifier bridge designs.

Manufactured in the Philippines under strict quality standards, the BYV32EB-200,118 delivers consistent performance suited for industrial, laboratory, and general electronics projects.

Supports maximum continuous forward current of 20 amperes for reliable operation. Peak reverse repetitive voltage rating of 200 volts ensures robust voltage tolerance. Low peak reverse current of 30 microamperes reduces leakage losses.

Features a maximum forward voltage drop of 1.15 volts enhancing efficiency. Compact TO-263 (D2PAK) package with dimensions 10.3 mm length, 9.4 mm width, and 4.5 mm height. Operates within temperature range from -40°C minimum to 150°C maximum.

Fast peak reverse recovery time of 25 nanoseconds suitable for switching applications. Designed as a common cathode diode ideal for general rectification purposes. Peak non-repetitive forward surge current of 137 amperes supports transient overloads.

Manufactured in the Philippines ensuring quality controlled production.

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