DiodesZetex N-Channel MOSFET 7.5 A 60 V Enhancement Mode Surface Mount 4-Pin SOT-223 ZXMN6A09GTA

DiodesZetex ZXMN6A09GTA is a high-performance N-Channel MOSFET transistor designed for surface mount applications requiring efficient switching and power handling capabilities. Rated for a continuous drain current of 7.5 A and a drain-source voltage of 60 V, this device operates in enhancement mode for precise transistor control in power electronics.

Its compact 4-pin SOT-223 package, measuring 6.7 mm length, 3.7 mm width, and 1.8 mm height, allows for flexible integration into dense PCB layouts in commercial, automotive, and industrial electronic equipment.

The MOSFET offers a low maximum drain-source resistance of 60 milliohms, ensuring minimal conduction losses and improved efficiency in power management circuits. It has a maximum power dissipation of 3.9 W and a typical gate charge of 24.2 nC at gate-source voltage, supporting fast and effective switching.

This device is rated for operation over a wide temperature range from -55°C to 150°C, meeting demanding environmental conditions and automotive standards with AEC-Q100 certification for enhanced reliability and durability.

Applications include power switching, DC/DC converters, automotive electronics, and other semiconductor uses where robust, compact, and efficient MOSFET transistors are required. Maximum continuous drain current of 7.5 A ensures adequate power handling.

Drain-source voltage rating of 60 V for versatile operation. Low Rds(on) of 60 mΩ for reduced power loss. Compact surface mount SOT-223 package. Wide operating temperature range and automotive standard compliance.

This DiodesZetex MOSFET is a reliable component suited for industrial and commercial electronic applications requiring superior switching performance and efficiency. Explore more MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart.