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onsemi NTF Type P-Channel MOSFET, 2.6 A, 60 V Enhancement Mode, 4-Pin SOT-223 Package NTF2955T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.57mm |
| Length | 6.5mm |
| Model | NTF2955T1G |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | NTF |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 185mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.3W |
| Typical Gate Charge Qg @ Vgs | 14.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This device supports a maximum continuous drain current of 2.6 amps.
- It features a maximum drain-source voltage of 60 volts for robust operation.
- The package type is surface-mounted SOT-223 with 4 pins.
- Maximum power dissipation is rated at 2.3 watts for thermal management.
- Gate charge typical value is 14.3 nanocoulombs at the specified gate voltage.
- Operating temperature ranges from -55°C to 175°C ensuring reliability in various environments.
- Drain-source resistance is low at 185 milliohms to optimize efficiency.
- Designed for enhancement mode with a P-channel type transistor configuration.
Product Description
onsemi NTF2955T1G is a P-Channel enhancement mode MOSFET designed for power management and switching applications in electronic circuits. It offers a maximum continuous drain current of 2.6 A and can withstand a drain-source voltage up to 60 V, making it suitable for moderate power handling tasks.
This MOSFET is housed in a compact 4-pin SOT-223 surface-mount package that facilitates easy PCB integration and soldering. The device features a low on-resistance of 185 milliohms, optimizing energy efficiency and reducing heat generation during operation.
With a maximum power dissipation of 2.3 W and an operating temperature range from -55°C to +175°C, the NTF2955T1G is engineered to maintain stable performance under harsh environmental conditions. The typical gate charge of 14.3 nC ensures efficient switching and control through standard gate driver circuits.
This transistor is commonly used in industrial, consumer electronics, and power conversion systems requiring reliable, compact, and efficient MOSFET solutions. Its enhancement mode P-channel design allows for easy integration in high-side switching configurations.
Maximum continuous drain current: 2.6 A. Drain-source voltage rating: 60 V. Surface mount SOT-223 type package with 4 pins. Low drain-source resistance of 185 mΩ. Typical gate charge of 14.3 nC at specified gate voltage.
Wide operating temperature range from -55°C to 175°C. Power dissipation capacity of 2.3 W. Compact dimensions: Length 6.5 mm, Width 3.5 mm, Height 1.57 mm.
This product is ideal for electronic designers and engineers in semiconductor, industrial automation, and power electronics fields looking for a reliable P-channel MOSFET. Explore more onsemi components and semiconductor solutions on EnvMart for optimized industrial and laboratory applications.
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Frequently Asked Questions
The NTF2955T1G supports a maximum continuous drain current of 2.6 A.
It features a maximum drain-source voltage of 60 V, suitable for moderate power handling tasks.
The typical gate charge is 14.3 nanocoulombs at the specified gate voltage.
The SOT-223 package has dimensions of 6.5 mm in length, 3.5 mm in width, and 1.57 mm in height.
The maximum power dissipation is rated at 2.3 watts, allowing for effective thermal management.
It operates within a temperature range of -55°C to 175°C, ensuring reliability in various environments.
The drain-source resistance is low at 185 milliohms, optimizing efficiency during operation.
The SOT-223 package features 4 pins for connection.
This model utilizes a P-channel type configuration, designed for enhancement mode.
The maximum gate-source voltage is rated at -20V to +20V.
This MOSFET is commonly used in power management and switching applications in industrial and consumer electronics.
The country of origin for this product is India.
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