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Vishay N-Channel MOSFET 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SI1302DL-T1-E3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | Si1302DL |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 480mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 280mW |
| Typical Gate Charge Qg @ Vgs | 0.86nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
| N-channel MOSFET TN0205A 250mA 20VBrand | Vishay |
Key Features
- Compact 3-pin SC-70 package suitable for surface-mount applications.
- Enhanced channel mode ensures efficient switching performance.
- Maximum power dissipation rated at 280 mW for reliable operation.
- Typical gate charge of 0.86 nC for fast switching capabilities.
- Wide operating temperature range from -55°C to 150°C.
- Low maximum drain-source resistance of 480 mΩ for minimal conduction loss.
- Gate-source voltage tolerance up to ±20 V enhances device robustness.
- Forward voltage drop of approximately 800 mV under typical conditions.
Product Description
Vishay SI1302DL-T1-E3 is a high-quality N-Channel MOSFET specialized for low power and low voltage electronic applications. Featuring an enhancement mode channel, this MOSFET offers a maximum continuous drain current of 600 mA and a drain-source voltage rating of 30 V, making it suitable for switching and amplification tasks in compact electronic devices.
The device is housed in a small 3-pin SC-70 package that facilitates surface mounting on printed circuit boards, optimizing space without sacrificing performance. It supports a maximum power dissipation of 280 mW, ensuring efficient thermal management even during continuous operation.
With a minimal typical gate charge (Qg) of 0.86 nC at Vgs, SI1302DL-T1-E3 enables fast switching speeds which are essential in high-frequency electronic circuits. The MOSFET also tolerates a gate-source voltage range of -20 V to +20 V, providing a robust operating window.
The device operates reliably across a wide temperature range, from -55°C to 150°C, suitable for diverse industrial and commercial environments. Its forward voltage is approximately 800 mV, predictable for accurate circuit design. The low Rds(on) of 480 mΩ contributes to efficient conduction with reduced power loss.
This MOSFET is ideal for use in power management, signal switching, and amplification in various industrial, consumer electronics, automotive, and communication equipment. Compact surface-mount design in SC-70 package of 3 pins.
High reliability across extended operating temperatures. Low gate charge for efficient switching performance. Enhancement mode N-channel operation. Robust voltage and current ratings suitable for diverse applications. Dimensions optimized for compact PCB integration.
The Vishay SI1302DL-T1-E3 N-Channel MOSFET presents a robust and efficient solution for electronics manufacturers seeking reliable transistor components. Explore the Electronics & Electricals category at EnvMart for more semiconductor options.
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Frequently Asked Questions
The maximum continuous drain current for this model is 600 mA.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The typical gate charge (Qg) at Vgs is 0.86 nC, enabling fast switching capabilities.
The maximum power dissipation for this model is rated at 280 mW.
The dimensions of the SC-70 package are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The operating temperature range for this model is from -55°C to 150°C.
The maximum gate-source voltage tolerance for this MOSFET is ±20 V.
The forward voltage drop is approximately 800 mV under typical conditions.
The maximum drain-source resistance (Rds(on)) is 480 mΩ, contributing to minimal conduction loss.
This model features an enhancement mode N-channel design.
This MOSFET is designed for surface mounting.
This MOSFET is suitable for power management, signal switching, and amplification in various electronic devices.
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