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Infineon HEXFET N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4110PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 370W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High current capacity of 180 amperes for demanding applications.
- Maximum drain-source voltage rating of 100 volts ensures robustness.
- Enhancement mode channel with a low 5 milliohm on-resistance.
- Compact 3-pin TO-247 package suitable for through-hole mounting.
- Maximum power dissipation of 370 watts supports high power operation.
- Wide operating temperature range from -55°C to 175°C for reliability.
- Typical gate charge of 150 nanocoulombs enables efficient switching.
- Maximum gate-source voltage rating of ±20 volts protects against over-voltage.
Product Description
Infineon IRFP4110PBF HEXFET N-Channel MOSFET is designed for high power efficiency and robust operation in demanding industrial and electronic applications. Featuring a maximum continuous drain current of 180 A and a maximum drain-source voltage of 100 V, this device is suitable for motor control and AC-DC synchronous rectifier circuits.
The enhancement mode channel configuration ensures reliable performance with a low on-resistance of 5 milliohms, minimizing power loss during conduction. The 3-pin TO-247 through-hole package offers ease of assembly and excellent thermal management with power dissipation up to 370 W.
This MOSFET supports a wide temperature range, operating from -55°C to 175°C, ensuring stability in harsh environments. With a typical gate charge of 150 nC and maximum gate-source voltage of ±20 V, the device exhibits efficient switching behavior and protection against voltage spikes.
Physical dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width, making it compact for various industrial installations. High current capacity of 180 A for rigorous motor control tasks. Durable construction with TO-247 package and heat dissipation of 370 W.
Wide operating temperature range ensures reliability. Low on-resistance enhances energy efficiency. Suitable for power management in industrial, automotive, and HVAC systems.
Infineon's HEXFET technology delivers best-in-class MOSFET devices offering high efficiency and protection, compliant with industry standards. This model is ideal for designers seeking reliable power transistors for electronics manufacturing and replacement components.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IRFP4110PBF is 180 A, making it suitable for demanding applications.
This model has a maximum drain-source voltage rating of 100 V, ensuring robustness in high voltage applications.
The on-resistance of the IRFP4110PBF is 5 milliohms, which helps minimize power loss during conduction.
It supports a maximum power dissipation of 370 W, allowing for high power operation in various applications.
The operating temperature range is from -55°C to 175°C, providing reliability in harsh environments.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width, making it compact for various installations.
It utilizes a 3-pin TO-247 package, which is suitable for through-hole mounting.
The typical gate charge is 150 nanocoulombs, which enables efficient switching performance.
The maximum gate-source voltage rating is ±20 V, providing protection against over-voltage conditions.
This MOSFET is suitable for motor control and AC-DC synchronous rectifier circuits, among other industrial applications.
It features an N-channel configuration, which is typical for enhancement mode devices.
The Infineon IRFP4110PBF is manufactured in India.
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