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Infineon HEXFET N-Channel MOSFET, 190 A Continuous Drain Current, 40 V Drain Source Voltage, 3-Pin TO-220 IRF1404ZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF1404ZPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 190A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 220W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Employs advanced HEXFET technology for higher efficiency.
- Designed in enhancement mode for optimal switching performance.
- Capable of handling maximum continuous drain current of 190 amperes.
- Maximum drain-source voltage of 40 volts ensures robust operation.
- Features low drain-source resistance of 4mΩ for reduced power loss.
- TO-220 package with through-hole mount for easy integration.
- Supports maximum power dissipation of 220 watts for high power applications.
- Operates reliably within temperature range -55°C to 175°C.
Product Description
Infineon IRF1404ZPBF HEXFET N-Channel MOSFET is a high-performance semiconductor designed for demanding automotive and industrial power applications. This device supports a maximum continuous drain current of 190 amperes and drain-source voltage of 40 volts, packaged in a compact and reliable 3-pin TO-220 form factor which allows straightforward through-hole mounting.
Featuring enhancement mode operation and advanced HEXFET technology, this MOSFET provides low on-resistance of 4mΩ, minimizing conduction losses and improving energy efficiency in power conversion systems. Its forward voltage drop is 1.3 volts, suitable for switching regulators, motor control circuits, power supplies, and industrial automation.
The device offers a maximum power dissipation of 220 watts, making it suitable for high power switching and amplification tasks. It supports operation within a wide temperature range from -55°C to 175°C, ensuring durability in harsh environments. Its typical gate charge of 100nC at the gate-to-source voltage facilitates fast switching speeds, enhancing overall device performance and reliability.
This IRF1404ZPBF MOSFET is ideal for use in automotive electronics and industrial automation, where efficient power management and robust switching are required. The 3-pin TO-220 package facilitates easy integration with printed circuit boards using through-hole mounting methods.
Employs HEXFET technology for enhanced efficiency and performance. Handles high continuous drain current up to 190A for power-intensive applications. Operates with drain-source voltage up to 40V with low resistance. Compact TO-220 package suited for through-hole mounting.
Wide operating temperature range from -55°C to +175°C ensures reliability. High maximum power dissipation of 220W supports demanding power circuits. Fast switching enabled by typical gate charge of 100nC at Vgs. Enhancement mode operation optimizes switching and power control.
Ideal for motor control, power supplies, automotive, and industrial applications. Discover more about MOSFETs and power management components in EnvMart's comprehensive electronics category.
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Frequently Asked Questions
This model can handle a maximum continuous drain current of 190 amperes.
The maximum drain-source voltage for this unit is 40 volts.
It is packaged in a TO-220 form factor, which allows for through-hole mounting.
The IRF1404ZPBF features a low drain-source resistance of 4mΩ, which helps reduce power loss.
The typical gate charge at the gate-to-source voltage is 100nC.
It operates reliably within a temperature range of -55°C to 175°C.
This unit supports a maximum power dissipation of 220 watts, making it suitable for high power applications.
The forward voltage drop for this MOSFET is 1.3 volts.
This model has a pin count of 3.
The IRF1404ZPBF utilizes an N-channel configuration, designed for enhancement mode operation.
This MOSFET is ideal for applications in motor control, power supplies, automotive electronics, and industrial automation.
The height of this model is 8.77 mm.
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