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onsemi N-Channel MOSFET, 17 A, 60 V Enhancement, 3-Pin TO-252 Surface Mount Power MOSFET NVD5C688NLT4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NVD5C688NLT4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NVD5C688NL-D |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 18W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a TO-252 package designed for surface mounting.
- Maximum continuous drain current is rated at 17 Amperes.
- It operates with a maximum drain-source voltage of 60 Volts.
- The device has a maximum power dissipation of 18 Watts for reliable thermal operation.
- Typical gate charge at Vgs is 7 nanoCoulombs, enabling efficient switching.
- The maximum gate-source voltage is 16 Volts, ensuring controlled device operation.
- The MOSFET exhibits a low maximum drain-source resistance of 40 milliohms for efficient conduction.
- Operating temperature ranges from -55°C to +175°C, suitable for automotive environments.
Product Description
onsemi NVD5C688NLT4G is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. Featuring a 3-pin TO-252 surface mount package, it supports a maximum continuous drain current of 17 A and a maximum drain-source voltage of 60 V, making it suitable for a wide range of industrial and automotive uses.
The device operates efficiently due to its low drain-source resistance of 40 milliohms and a maximum power dissipation of 18 W. The typical gate charge of 7 nC at Vgs contributes to fast switching characteristics, which is critical in power management and electronic control units.
Engineered to withstand challenging environments, the MOSFET offers a broad operating temperature range from -55°C up to 175°C, and complies with the AEC-Q101 automotive qualification standard, ensuring durability and dependability in automotive and industrial electronics applications.
Its robust forward voltage rating of 1.2 V makes it ideal for power conversion, motor control, and load switching in electronic circuits. The device’s package dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) support compact PCB layouts commonly required in modern electronics design.
This MOSFET is extensively used in power supplies, motor drivers, and automotive electronics, delivering high efficiency and reliable performance in demanding conditions. The surface mount TO-252 form factor facilitates automated assembly and efficient thermal management.
This MOSFET features a TO-252 package designed for surface mounting. Maximum continuous drain current is rated at 17 Amperes. It operates with a maximum drain-source voltage of 60 Volts. The device has a maximum power dissipation of 18 Watts for reliable thermal operation.
Typical gate charge at Vgs is 7 nanoCoulombs, enabling efficient switching. The maximum gate-source voltage is 16 Volts, ensuring controlled device operation. The MOSFET exhibits a low maximum drain-source resistance of 40 milliohms for efficient conduction.
Operating temperature ranges from -55°C to +175°C, suitable for automotive environments. Adheres to automotive standard AEC-Q101, ensuring high reliability. Explore more about onsemi MOSFETs and power semiconductors in our Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 17 Amperes.
It operates with a maximum drain-source voltage of 60 Volts.
The device has a maximum power dissipation of 18 Watts, allowing for reliable thermal operation.
The typical gate charge at Vgs is 7 nanoCoulombs, which enables efficient switching.
The maximum gate-source voltage is 16 Volts, ensuring controlled operation of the device.
It exhibits a low maximum drain-source resistance of 40 milliohms for efficient conduction.
The package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
It operates within a temperature range of -55°C to +175°C, making it suitable for automotive environments.
Yes, it complies with the AEC-Q101 automotive qualification standard, ensuring reliability in automotive applications.
This MOSFET is extensively used in power supplies, motor drivers, and automotive electronics, delivering high efficiency.
It features a surface mount design, specifically in a TO-252 package.
This model is an N-Channel Enhancement Mode MOSFET, suitable for power switching applications.
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