onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM

onsemi FQD17P06TM is a QFET type P-Channel MOSFET designed for high efficiency and rugged performance. It is tailored for use in various industrial and electronic applications requiring controlled switching of power loads with a maximum drain current of 12 A and a voltage rating of 60 V. This enhancement mode MOSFET comes in a compact 3-pin TO-252 surface mount package ideal for space-constrained designs.

Manufactured using ON Semiconductor's proprietary high cell density DMOS technology, the FQD17P06TM device ensures minimal on-state resistance, contributing to energy savings and improved thermal performance. The device is well-suited for applications including load switching, DC/DC converters, battery protection circuits, power management controls, and DC motor control.

This MOSFET features robust electrical characteristics such as a maximum drain-source resistance of 135 mΩ, a forward voltage of -4 V, and a gate-source voltage tolerance of -25 V to +25 V. It supports a maximum power dissipation of 2.5 W and operates reliably across temperatures from -55°C to 150°C. The device’s typical gate charge is 21 nC, enabling efficient gate drive and fast switching speeds.

Compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height facilitate effective PCB layout and thermal management in power electronic assemblies. The absence of automotive qualifications indicates usage primarily in commercial and industrial electronics rather than automotive systems.

Engineers and designers rely on the onsemi FQD17P06TM for its high-density design, reliable switching capabilities, and its role in optimizing energy consumption in power circuits. Applications span across industrial instrumentation, laboratory equipment, HVAC systems, manufacturing automation, and general power management scenarios.

Voltage controlled P-Channel small signal switch for high efficiency. High-density cell design reduces on-state resistance for durability. Enhanced rugged performance using DMOS technology. Suitable for load switching and DC/DC converters.

Supports battery protection and power management control. Compact TO-252 surface mount package for easy integration. Wide operating temperature range suitable for industrial environments. Maximum power dissipation of 2.5 W for stable operation.

Typical gate charge enables fast switching capability.

This semiconductor product is a dependable choice within the discrete MOSFET transistor category at EnvMart. Explore related onsemi components and other MOSFET devices to match your design specifications and industrial requirements.