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onsemi PowerTrench N-Channel MOSFET 12.5 A 30 V Enhancement Mode 8-Pin SOIC FDS6680A

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onsemi PowerTrench N-Channel MOSFET 12.5 A 30 V Enhancement Mode 8-Pin SOIC FDS6680A

Name: onsemi PowerTrench N-Channel MOSFET 12.5 A 30 V Enhancement Mode 8-Pin SOIC FDS6680A
Brand: onsemi
SKU: 207552
Price: 0.71 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS6680A
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	12.5A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	10mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	16nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	700mV

Key Features

This device features a low 10 milliohm maximum drain-source resistance for efficient conduction.
It supports a maximum continuous drain current of 12.5 amperes.
Operates safely within a temperature range of -55°C to 150°C for reliable performance.
Designed for surface mounting in electronic circuits for power management applications.
Includes a typical gate charge of 16 nanocoulombs at the gate-source voltage threshold.
Maximum gate-source voltage tolerance ranges from -20 V to +20 V.
Maximum power dissipation is rated at 2.5 watts.
The transistor package dimensions are compact at 5 mm length, 4 mm width, and 1.5 mm height.

Product Description

onsemi FDS6680A PowerTrench N-Channel MOSFET is an advanced semiconductor device designed for efficient switching and amplification in electronic circuits. It features an 8-pin SOIC surface-mount package that facilitates compact assembly and thermal management in circuit boards.

This transistor supports a maximum continuous drain current of 12.5 A and a maximum drain-source voltage of 30 V, making it suitable for moderate power applications. The enhanced channel mode improves switching performance with minimal conduction losses owing to its low maximum drain-source resistance of 10 mΩ.

Its gate characteristics include a gate charge of 16 nC at Vgs threshold and a maximum gate-source voltage range from -20 V to +20 V, offering robust control and operational reliability. This MOSFET can dissipate up to 2.5 W of power and withstand ambient conditions from -55°C to 150°C, ensuring durability in industrial and electronic applications.

Compact dimensions (5 mm length, 4 mm width, and 1.5 mm height) deliver flexibility for integration into various electronic designs, including power management circuits, switching regulators, and load drivers.

Low 10 milliohm drain-source resistance minimizes power loss. 12.5 A continuous drain current supports moderate load demands. Wide operational temperature range enhances device reliability. Surface mount SOIC package ensures easy PCB implementation.

High gate-source voltage tolerance ensures stable switching. Moderate power dissipation caters to varied industrial uses. Compact form factor supports space-constrained applications.

This MOSFET is ideal for use in industrial, electronic manufacturing, automotive electronics (non-automotive certified), and power distribution systems. It is part of onsemi's PowerTrench series, known for high efficiency and reliability in discrete semiconductor components.

Explore more onsemiconductors and other MOSFETs in EnvMart for your electronic and power management needs.