onsemi PowerTrench N-Channel MOSFET, 3 A, 20 V Enhancement Mode, Surface Mount, 3-Pin SOT-23 FDN339AN

onsemi FDN339AN PowerTrench N-Channel MOSFET is a high-performance transistor designed for switching and amplification in electronic circuits. It supports a continuous drain current of up to 3 A and a maximum drain-to-source voltage of 20 V. The device features an enhancement mode operation and is packaged in a surface mount SOT-23 3-pin form factor, allowing compact PCB designs.

This MOSFET exhibits a low maximum drain-source resistance (Rds(on)) of 35 milliohms, which helps reduce power losses during conduction. It is capable of dissipating up to 500 milliwatts of power, ensuring reliable thermal performance across industrial and commercial electronics.

The device operates efficiently over a broad temperature range from -55°C to 150°C, suitable for various environmental conditions. The typical gate charge of 7 nanocoulombs facilitates fast switching speeds, essential for high-frequency applications.

The forward voltage is approximately 1.2 V, contributing to improved circuit efficiency. The gate-to-source voltage withstands between -8 V and +8 V, providing gate protection against voltage spikes.

Physical dimensions measure 2.92 mm length, 1.4 mm width, and 940 micrometers height, suitable for compact layouts. This MOSFET does not comply with automotive standards but is appropriate for general electronic component use in power management and signal processing sectors.

Ideal applications include power supplies, motor controls, and signal switching in industrial, laboratory, and commercial electronics. The compact package enables easy integration into high-density circuit boards.

Designed for surface mount applications with a compact SOT-23 package. Maximum continuous drain current is 3 amperes for robust power handling. Features low drain-source resistance of 35 milliohms for efficient conduction.

Operating temperature range from -55°C to 150°C supports industrial applications. Typical gate charge is 7 nanocoulombs allowing fast switching performance. Maximum power dissipation up to 500 milliwatts ensures reliable operation in circuits.

Forward voltage is approximately 1.2 volts enhancing circuit efficiency. Gate to source voltage tolerates between -8 V and +8 V for protection. Compact physical dimensions: length 2.92 mm, width 1.4 mm, and height 940 micrometers.

No automotive standards compliance; suitable for standard electronic devices. Explore related MOSFETs and semiconductor components at EnvMart for comprehensive solutions in electronics and electrical engineering.