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onsemi UltraFET N-Channel MOSFET, 10.6 A, 60 V Enhancement Mode, 8-Pin MLP Package FDMS5672

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onsemi UltraFET N-Channel MOSFET, 10.6 A, 60 V Enhancement Mode, 8-Pin MLP Package FDMS5672

Name: onsemi UltraFET N-Channel MOSFET, 10.6 A, 60 V Enhancement Mode, 8-Pin MLP Package FDMS5672
Brand: onsemi
SKU: 207537
Price: 3.58 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	750μm
Length	5mm
Model	FDMS5672
Width	6mm
Mount Type	Surface
Series	UltraFET
Maximum Operating Temperature	150°C
Package Type	MLP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.6A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	12mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	32nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Utilizes UltraFET trench technology for high efficiency power conversion.
Features a low maximum drain-source resistance of 12 milliohms enhancing conduction performance.
Supports operation from -55°C to 150°C ensuring wide thermal tolerance.
Optimized for high frequency applications requiring low gate charge and minimal reverse recovery time.
Ideal for DC to DC converters, switching regulators, motor drivers, and power management solutions.
Compact 5 mm length, 6 mm width, and 750 μm height package dimensions.
High maximum power dissipation of 2.5 W suitable for moderate power applications.
Maximum gate-source voltage rating of -20 V to +20 V for robust gate drive tolerance.

Product Description

onsemi FDMS5672 UltraFET N-Channel MOSFET is a high-performance power semiconductor device designed for efficient switching and power management applications. It supports a maximum continuous drain current of 10.6 A and a maximum drain-source voltage rating of 60 V, ensuring reliability in a range of electrical environments. The device incorporates UltraFET trench MOSFET technology, which delivers benchmark efficiency in power conversion applications by minimizing on-resistance and gate charge.

This enhancement mode MOSFET features a compact 8-pin MLP surface mount package with dimensions of 5 mm in length, 6 mm in width, and 750 μm in height. Its low Rds(on) of 12 milliohms minimizes conduction losses, while the typical gate charge of 32 nC allows rapid switching suitable for high-frequency DC to DC converters, switching regulators, and motor driver circuits.

The device operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and commercial electronic applications. Its fast recovery diode characteristic exhibits low reverse recovery time and stored charge, enhancing performance in switching circuits.

Applications primarily include power management systems, motor control, high-frequency switching regulators, and low-voltage bus switches where high efficiency and reliability are essential. The FDMS5672 is not certified under automotive standards and has no official approvals listed, emphasizing its general industrial grade usage.

Utilizes UltraFET trench technology for high efficiency power conversion. Low maximum drain-source resistance (Rds(on)) of 12 milliohms. Wide operating temperature range from -55°C to 150°C. Compact 8-pin MLP surface mount package measuring 5 mm x 6 mm x 0.75 mm.

High maximum continuous drain current of 10.6 A and power dissipation of 2.5 W. Fast diode recovery with low reverse recovery time and stored charge. Maximum gate-source voltage up to ±20 V for robust operation. Ideal for industrial, laboratory, HVAC, and commercial power electronics.

This MOSFET fits into the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart for professional procurement.