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onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V, Surface Mount, 8-Pin WDFN FDMS2672

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onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V, Surface Mount, 8-Pin WDFN FDMS2672

Name: onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V, Surface Mount, 8-Pin WDFN FDMS2672
Brand: onsemi
SKU: 104784

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.75mm
Length	5mm
Model	FDMS2672
Width	6mm
Mount Type	Surface
Series	UltraFET
Maximum Operating Temperature	150°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	156mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	78W
Typical Gate Charge Qg @ Vgs	30nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET features surface mount WDFN package with 8 pins, optimized for compact electronic designs.
UltraFET series combines low RDS(on), low gate charge, and high power dissipation of 78 W for efficient switching.
Capable of operating within -55°C to 150°C temperature range ensuring reliable performance.
Diode offers low reverse recovery time and stored charge, ideal for high-frequency DC to DC converters.
Typical gate charge of 30 nC supports low energy loss during switching operations.
Maximum gate-source voltage rating is 20 V and forward voltage is 1.2 V.
Applications include switching regulators, motor drivers, low-voltage bus switches, and power management in industrial and electronic systems.

Product Description

onsemi FDMS2672 UltraFET Type N-Channel MOSFET is a highly efficient and reliable discrete semiconductor designed for power electronics requiring effective control and switching capabilities. Featuring a surface mount 8-pin WDFN package, this MOSFET supports a maximum continuous drain current of 20 A and a maximum drain-source voltage of 200 V, making it suitable for demanding industrial and commercial electronics applications.

The UltraFET® technology provides benchmark performance for power conversion, combining low on-resistance (156 mΩ), low typical gate charge (30 nC), and high maximum power dissipation of 78 W. This technology is optimized for high-frequency operation with minimal losses, aiding in efficient energy management across DC to DC converters, switching regulators, and motor control circuits.

This device operates over a wide temperature range from -55°C to 150°C, ensuring dependable performance under harsh environmental conditions. Its gate-source maximum voltage of 20 V and forward voltage of 1.2 V further contribute to its robustness in power switching environments.

The physical dimensions - length 5 mm, width 6 mm, and height 0.75 mm - allow integration into compact circuit boards, supporting modern electronic designs that demand smaller footprints.

Typical industrial and laboratory applications include switching regulators, motor drivers, low-voltage bus switching, power management systems, and high-frequency DC to DC converters. Its low reverse recovery time and stored charge diode properties reduce switching losses and improve overall efficiency.

Set features optimized for high energy capability in avalanche mode and superior performance at high frequencies. This MOSFET supports efficient power conversion with low ESR and Miller gate charge. Designed for high-frequency DC to DC converters and switching regulators.

Suitable for motor drivers and low-voltage bus switches in power management systems. Compact WDFN 8-pin surface mount package designed for space-saving PCB layouts. Operates reliably across extreme temperatures from -55°C up to 150°C.

Offers durable operation with maximum power dissipation of 78 W. Enhanced performance in avalanche mode with low reverse recovery time diode.

Explore more onsemi MOSFETs and electronic components for demanding industrial, commercial, and laboratory power electronics applications within EnvMart’s extensive Semiconductor and Discrete Semiconductor offering.