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Infineon HEXFET N-Channel MOSFET 129 A 135 V Enhancement Surface Mount 3-Pin TO-263 IRF135S203
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.65mm |
| Length | 10.67mm |
| Model | IRF135S203 |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 129A |
| Maximum Drain Source Voltage Vds | 135V |
| Maximum Drain Source Resistance Rds | 8.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 441W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features a maximum continuous drain current of 129 A.
- It supports a maximum drain-source voltage of 135 V with enhancement channel mode.
- The device offers a low maximum drain-source resistance of 8.4 milliohms for efficient switching.
- It has a high maximum power dissipation rating of 441 W, suitable for demanding industrial uses.
- The operating temperature range spans from -55°C to 175°C.
- The typical gate charge at Vgs is 180 nC providing reliable switching performance.
- Maximum gate-source voltage ranges from -20 V to +20 V.
- The MOSFET has a forward voltage of 1.3 V and compact dimensions in a TO-263 surface mount package.
Product Description
Infineon IRF135S203 HEXFET N-Channel MOSFET is a powerful semiconductor device in a 3-pin TO-263 surface mount package, engineered for high current and voltage applications with a maximum continuous drain current of 129 A and a drain-source voltage up to 135 V. Featuring enhancement channel mode, this MOSFET provides efficient switching with a low maximum drain-source resistance of 8.4 milliohms and a maximum power dissipation of 441 W.
Designed to operate reliably in harsh conditions, the device supports a wide operating temperature range from -55°C to 175°C, making it suitable for industrial, motor drive, power tool, inverter, and battery management applications where performance and durability are critical. The typical gate charge is 180 nC at Vgs, ensuring effective switching, while the gate-source voltage withstands between -20 and +20 volts.
Implementing Infineon's StrongIRFET™ technology, this MOSFET offers improved ruggedness against gate and avalanche stress, as well as dynamic dv/dt, enhancing reliability in demanding environments.
The compact TO-263 package has dimensions of length 10.67 mm, width 4.83 mm, and height 9.65 mm, optimized for surface mounting on printed circuit boards, enabling space-efficient and robust assembly.
This product is New, meets industrial standards, and is provided by Infineon with no automotive qualification. This MOSFET features a maximum continuous drain current of 129 A. It supports a maximum drain-source voltage of 135 V with enhancement channel mode.
The device offers a low maximum drain-source resistance of 8.4 milliohms for efficient switching. It has a high maximum power dissipation rating of 441 W, suitable for demanding industrial uses. The operating temperature range spans from -55°C to 175°C.
The typical gate charge at Vgs is 180 nC providing reliable switching performance. Maximum gate-source voltage ranges from -20 V to +20 V. The MOSFET has a forward voltage of 1.3 V and compact dimensions in a TO-263 surface mount package.
It is optimized for industrial motor drives, power tools, inverters, and battery management applications. The StrongIRFET architecture provides robustness against gate, avalanche, and dynamic dv/dt stresses. Explore more products in the MOSFET category at EnvMart to fulfill your industrial semiconductor component needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 129 A.
This model supports a maximum drain-source voltage of 135 V.
The maximum power dissipation rating is 441 W, making it suitable for demanding industrial applications.
The operating temperature range spans from -55°C to 175°C.
The typical gate charge at Vgs is 180 nC, ensuring reliable switching performance.
The dimensions of the TO-263 package are 10.67 mm in length, 4.83 mm in width, and 9.65 mm in height.
The maximum gate-source voltage ranges from -20 V to +20 V.
The maximum drain-source resistance is 8.4 milliohms, which contributes to efficient switching.
This MOSFET is optimized for industrial motor drives, power tools, inverters, and battery management applications.
This MOSFET has a pin count of 3.
This model features an N-channel type.
It implements Infineon's StrongIRFET™ technology, enhancing robustness against gate and avalanche stress.
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