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Infineon HEXFET N-Channel MOSFET, 160 A, 60 V Enhancement Mode, 3-Pin TO-220 IRFB3306PBF
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB3306PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a rugged HEXFET N-channel design suitable for enhancement mode operation.
- Comes in a durable 3-pin TO-220 package optimized for through-hole mounting.
- Offers a low maximum drain-to-source resistance of 4 milliohms for efficient conduction.
- Capable of dissipating up to 230 W power with a maximum operating temperature of 175 degrees Celsius.
- Operates reliably in temperatures as low as -55 degrees Celsius, supporting industrial environments.
- Typical gate charge is 85 nC at gate voltage, with gate-source voltage rating of -20 to +20 V.
- Forward voltage drop is approximately 1.3 V for efficient switching applications.
- Compact dimensions of 10.66 mm length, 9.02 mm height, and 4.82 mm width ensure ease of integration.
Product Description
Infineon IRFB3306PBF HEXFET N-Channel MOSFET is engineered for robust performance in power management and motor control systems. It operates at a maximum continuous drain current of 160 A and withstands drain-source voltages up to 60 V, making it ideal for demanding electrical and industrial applications.
This transistor comes in a TO-220 3-pin package designed for through-hole mounting, providing easy installation and thermal management. It features an enhancement-mode configuration with a low maximum drain-to-source resistance (Rds(on)) of 4 milliohms, reducing conduction losses and improving efficiency in synchronous rectification and motor drive circuits.
The device supports maximum power dissipation of 230 W and can reliably function in operating temperature ranges from -55°C to 175°C, ensuring suitability for harsh environments and industrial-grade usage.
Key electrical characteristics include a typical gate charge of 85 nC and a gate-source voltage range of -20 to +20 V, which facilitate effective gate control. Its forward voltage drop of 1.3 V enhances switching performance and efficiency in power circuits.
The compact form factor with dimensions of 10.66 mm length, 9.02 mm height, and 4.82 mm width allows for flexible design integration in power electronic modules, industrial controllers, and synchronous rectifiers.
Applications include motor control, AC-DC synchronous rectifiers, and other power management circuits requiring high current and power handling capability with reliable thermal performance.
Infineon's MOSFET portfolio includes advanced devices like the IRFB3306PBF to deliver optimum power efficiency, reliability, and robustness that meet AEC-Q101 automotive standards, though this specific model is not automotive certified.
Set includes one unit of Infineon IRFB3306PBF MOSFET in TO-220 package. Explore more from the comprehensive range of Infineon HEXFET MOSFETs at EnvMart for your industrial and laboratory electronics needs.
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Frequently Asked Questions
The Infineon IRFB3306PBF can handle a maximum continuous drain current of 160 A.
This MOSFET is rated for a maximum drain-source voltage of 60 V.
It can dissipate up to 230 W of power.
The typical gate charge at gate voltage is 85 nC.
The dimensions are 10.66 mm in length, 9.02 mm in height, and 4.82 mm in width.
It operates reliably at a maximum temperature of 175°C.
The minimum operating temperature is -55°C.
This model comes in a 3-pin TO-220 package designed for through-hole mounting.
The maximum gate-source voltage rating is -20 to +20 V.
The forward voltage drop is approximately 1.3 V.
It features an N-channel design with enhancement mode operation.
The maximum drain-source resistance is 4 milliohms.
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