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Infineon HEXFET N-Channel Power MOSFET 202 A Continuous Drain Current 40 V Vds, TO-220AB Package IRF1404PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.67mm |
| Model | IRF1404PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 202A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.004Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 333W |
| Typical Gate Charge Qg @ Vgs | 131nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRF1404 162A 40VBrand | International Rectifier |
Key Features
- Features a low on-resistance of 4 milliohms for high efficiency.
- Supports maximum power dissipation of 333 watts to enable heavy loads.
- Operates safely from -55°C up to 175°C for reliable performance in harsh environments.
- Incorporates enhancement-mode channel for effective switching control.
- Includes 3 pins in a through-hole mount configuration for easy integration.
- Utilizes Si MOSFET technology for superior thermal management.
- Ideal for industrial automation, motor drives, and renewable energy systems.
- Maximum gate-source voltage ratings of -20 to +20 volts ensure device protection.
Product Description
Infineon IRF1404PBF HEXFET N-Channel Power MOSFET is designed for demanding power applications requiring robust continuous current handling and low conduction losses. The transistor supports a continuous drain current of 202 A and a drain-source voltage rating of 40 V. Packaged in a TO-220AB case with three pins and a through-hole mounting type, this device facilitates straightforward installation and reliable heat dissipation.
The low on-resistance of 0.004 ohms (4 milliohms) ensures minimal power loss during operation, contributing to overall energy efficiency and thermal management. It is capable of withstanding junction temperatures up to 175°C, making it well suited for industrial, electrical, and automation applications operating in demanding environments.
The enhancement-mode Si MOSFET technology employed provides fast switching capabilities and improved system responsiveness. The maximum power dissipation of 333 W supports heavy-load requirements in various power control scenarios.
Low on-resistance of 4 milliohms improves efficiency by reducing conduction losses. Supports continuous drain current of 202 amperes, enabling high current applications. Capable of operating up to 175°C, suitable for harsh industrial environments.
Three-pin TO-220AB package allows easy mounting and effective thermal dissipation. Operates at gate-source voltages between -20 and +20 volts for robust control. Enhancement channel mode offers improved switching performance.
Si MOSFET technology ensures reliable and effective power management. Applications include industrial automation, motor controllers, power supplies, and renewable energy systems.
This component is used extensively in industrial automation systems for efficient power switching, motor drives for controlling high currents, and power supply designs prioritizing efficiency and thermal performance. It is also suitable for renewable energy equipment for effective power control and management.
Explore more components in the Power MOSFET category for additional semiconductor solutions tailored for your power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 202 A, allowing it to handle high current applications effectively.
This power MOSFET has a maximum drain-source voltage rating of 40 V, suitable for various power applications.
It features a low on-resistance of 4 milliohms, which helps minimize power loss during operation and enhances efficiency.
The maximum power dissipation for this unit is 333 W, enabling it to support heavy-load requirements in power control scenarios.
It can operate safely in temperatures ranging from -55°C to 175°C, making it suitable for harsh environments.
This model is packaged in a TO-220AB case with three pins, designed for through-hole mounting, which facilitates easy installation.
It utilizes an enhancement-mode N-channel, which provides effective switching control and improved responsiveness.
The typical gate charge at Vgs is 131 nC, which is relevant for determining switching performance in circuits.
The maximum gate-source voltage ratings for this MOSFET are -20 V to +20 V, ensuring robust control and protection of the device.
This component is suitable for industrial automation, motor drives, power supplies, and renewable energy systems, among other applications.
The dimensions of this MOSFET are 10.67 mm in length, 4.83 mm in width, and 8.77 mm in height.
It utilizes Si MOSFET technology, which provides superior thermal management and enhances overall performance in power applications.
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