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Infineon HEXFET Type P-Channel MOSFET 19A 55V 3-Pin TO-220 IRF9Z34NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9Z34NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| IRF9Z34N, P-Channel MOSFET Transistor 19A 55V, 3-Pin TO-220ABBrand | International Rectifier |
Key Features
- Supports a maximum continuous drain current of 19A for substantial load handling.
- Operates at a maximum drain-source voltage of 55V suitable for medium voltage applications.
- Enhancement mode channel offers efficient switching capabilities.
- Low maximum drain-source resistance (100 mΩ) optimizes power efficiency.
- Maximum power dissipation of 68W ensures durability under demanding conditions.
- Capable of operating at temperatures up to 175°C for high thermal resilience.
- Package type TO-220 with 3 pins enables easy through-hole mounting integration.
- Designed for fast switching with a typical gate charge of 35nC at Vgs.
Product Description
Infineon IRF9Z34NPBF HEXFET Type P-Channel MOSFET is engineered for reliable power management with a continuous drain current rating of 19 amps and a drain-source voltage of 55 volts. Its enhancement channel design allows efficient switching performance, making it well-suited for industrial automation and various electronic control systems.
This device features a maximum power dissipation rating of 68 watts, accommodating demanding operating conditions while maintaining reliability. Its TO-220 package simplifies mounting on through-hole circuit boards, with a compact form factor measuring 10.54mm in length, 8.77mm in height, and 4.69mm in width.
The MOSFET has a low maximum drain-source resistance of 100 milliohms, reducing conduction losses and improving overall system efficiency. The device supports a maximum gate-source voltage range of -20 to +20 volts, allowing flexibility in circuit design. It can endure operating temperatures from -55°C up to 175°C, making it suitable for harsh industrial environments.
Applications include power supply efficiency enhancement, motor control systems, and high-frequency switching circuits. The low typical gate charge of 35nC at 10V ensures swift switching, minimizing delays in power conversion and control tasks.
Supports high current loads up to 19 amperes. Capable of 55 volts drain-source voltage operation. Enhancement channel mode for efficient switching. Compact TO-220 3-pin package for through-hole mounting. Maximum power dissipation rating of 68 watts for heat management.
Wide operating temperature range from -55°C to +175°C. Low forward voltage drop of -1.6V increasing power efficiency. Ideal for power management and motor control industrial use. Robust design suited for high-frequency switching applications.
This Infineon MOSFET is part of the HEXFET series known for its high efficiency and durability in discrete semiconductor applications. Its versatility makes it an excellent choice for engineers working on power electronic projects within industrial, manufacturing, and commercial systems. Explore EnvMart's extensive semiconductor category for more tools like this.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19A, allowing it to handle substantial loads effectively.
This MOSFET operates at a maximum drain-source voltage of 55V, making it suitable for medium voltage applications.
The IRF9Z34NPBF comes in a TO-220 package type with a 3-pin configuration, facilitating easy through-hole mounting integration.
It has a maximum power dissipation rating of 68W, which helps manage heat effectively under demanding conditions.
The typical gate charge for this model is 35nC at a gate-source voltage of 10V, enabling fast switching capabilities.
This MOSFET can operate within a temperature range of -55°C to 175°C, making it suitable for harsh industrial environments.
The maximum drain-source resistance is 100 mΩ, which optimizes power efficiency by reducing conduction losses.
The forward voltage drop for this model is -1.6V, which contributes to its overall power efficiency.
It is suitable for applications such as power supply efficiency enhancement, motor control systems, and high-frequency switching circuits.
This model features a Type P channel, which is designed for efficient switching performance.
The maximum gate-source voltage range for this model is -20 to +20 volts, providing flexibility in circuit design.
The country of origin for this MOSFET is India, indicating where it is manufactured.
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