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Vishay N-Channel MOSFET 4.3 A 1 kV Enhancement 3-Pin TO-247 IRFPG40PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFPG40PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFPG40 4.3A 1000VBrand | Vishay |
Key Features
- Supports a maximum continuous drain current of 4.3 amperes.
- Maximum drain-source voltage rating of 1000 volts ensures high voltage tolerance.
- Through-hole mount type suitable for various PCB layouts.
- Low maximum drain-source resistance of 3.5 ohms enhances efficiency.
- Typical gate charge of 120 nC at Vgs facilitates fast switching.
- Wide operating temperature range from -55°C to 150°C.
- Maximum power dissipation rating of 150 watts enables handling of significant loads.
- Suited for industrial, power management, and electronic control systems.
Product Description
The Vishay IRFPG40PBF is a high-performance N-Channel MOSFET designed for industrial and electronic applications requiring reliable power switching and amplification. Featuring a maximum continuous drain current of 4.3 A and a drain-source voltage rating of up to 1000 V, this MOSFET supports demanding electrical loads with excellent efficiency, thanks to its low 3.5 Ω Rds(on).
The device is housed in a durable 3-pin TO-247 package, optimized for through-hole mounting, making it suitable for various PCB designs and assembly processes. Its enhancement channel mode allows effective control of transistor conduction.
This MOSFET features a typical gate charge of 120 nC at Vgs, enabling fast switching speeds vital for power management and switching power supplies. It maintains stable operation across a wide temperature range from -55°C to 150°C, supporting reliable performance under industrial and harsh environmental conditions.
Key physical dimensions include a length of 15.87 mm, width of 5.31 mm, and height of 20.7 mm, suitable for compact assembly requirements. With a maximum power dissipation capability of 150 W, the IRFPG40PBF can handle significant power loads efficiently in applications such as power converters, motor controllers, and industrial automation equipment.
Maximum continuous drain current: 4.3 A. Maximum drain-source voltage: 1000 V. Package type: TO-247 with 3 pins suitable for through-hole mounting. Low drain-source resistance of 3.5 Ω for efficiency. Gate charge: 120 nC at Vgs.
Operating temperature range: -55°C to 150°C. Maximum power dissipation: 150 W. Physical dimensions: 15.87 mm length, 5.31 mm width, 20.7 mm height. Enhanced channel mode semiconductor device ideal for power management systems.
This N-channel MOSFET is ideal for industrial electronic components, power distribution circuits, and semiconductor applications. Explore our extensive Electronics & Electricals category at EnvMart for additional MOSFETs and semiconductor solutions for your projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4.3 amperes.
It has a maximum drain-source voltage rating of 1000 volts, ensuring high voltage tolerance.
This model features a through-hole mount type, suitable for various PCB layouts.
The maximum drain-source resistance is 3.5 ohms, which enhances its efficiency.
The typical gate charge at Vgs is 120 nC, facilitating fast switching.
It operates within a wide temperature range from -55°C to 150°C.
The maximum power dissipation rating is 150 watts, allowing it to handle significant loads.
The physical dimensions are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
It is housed in a TO-247 package type, designed for through-hole mounting.
This model is suitable for industrial, power management, and electronic control systems.
The channel mode of this device is enhancement, allowing effective control of transistor conduction.
The maximum gate-source voltage for this model is -20V to +20V.
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