Infineon HEXFET N-Channel MOSFET 30 A 200 V Enhancement Mode 3-Pin TO-247 IRFP250NPBF

Infineon IRFP250NPBF is a high-performance HEXFET N-Channel MOSFET designed for demanding electronic applications. It features a maximum continuous drain current of 30 A and a drain-source voltage rating of 200 V within a durable TO-247 package. This transistor operates in enhancement mode, providing efficient current flow control with low on-resistance of 75 mΩ, thereby minimizing energy loss and heat generation during operation.

The device supports a maximum power dissipation of 214 W, facilitating operation under heavy power loads. It features a gate charge of 123 nC at Vgs, with a maximum gate-source voltage range of -20 V to +20 V, allowing flexible gate drive requirements. Designed to work across a broad temperature range from -55°C to 175°C, it ensures reliable function in harsh thermal environments.

This MOSFET is packaged in a three-pin TO-247 form factor suitable for through-hole mounting, ensuring easy integration into various circuit designs.

Applications include industrial power supplies, high-current load driving in electronic circuits, renewable energy system inverters and converters, and motor control requiring rapid switching capabilities. Its single-pulse avalanche energy rating provides protection against energy surges during fault conditions.

Supports 30 A continuous current capability. Operates up to 200 V maximum drain-source voltage. Low 75 mΩ Rds(on) for efficient operation. 214 W maximum power dissipation. 3-pin TO-247 package for standard mounting. Wide operating temperature range ensures reliability.

Enhancement mode operation for efficient switching. Typical gate charge 123 nC for balanced speed. Gate-source voltage range from -20 V to +20 V. Suitable for industrial and renewable energy applications. Explore more high-quality MOSFETs and semiconductor devices in EnvMart's Electronics & Electricals categories for your industrial and electronic design requirements.