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Vishay 120 V 35 A Surface Mount Schottky Diode TO-252 Package 3-Pin DPAK V35PWM12HM3/I
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.4mm |
| Length | 6.32mm |
| Model | V35PWM12HM3/I |
| Width | 6.72mm |
| Mount Type | Surface |
| Series | V35X |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 35A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 40mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 260A |
| Maximum Forward Voltage Vf | 1.05V |
Key Features
- Maximum continuous forward current of 35 amperes for high current applications.
- Peak reverse repetitive voltage of 120 volts ensuring robust blocking capabilities.
- Low forward voltage drop of 1.05 volts to improve efficiency.
- Operates reliably between temperatures of -40°C to 175°C.
- Trench MOS Barrier Schottky (TMBS) technology for improved performance.
- Compliance with automotive standard AEC-Q101 for automotive applications.
- Peak non-repetitive forward surge current rating of 260 amperes.
- Single diode configuration suitable for discrete semiconductor applications.
Product Description
Vishay V35PWM12HM3/I is a high-performance Schottky diode designed in a compact TO-252 surface mount package with 3 pins, suitable for power rectification in electronic circuits requiring high current and voltage ratings.
It features a maximum continuous forward current of 35 amperes and a peak reverse repetitive voltage of 120 volts, making it ideal for applications in power supplies, automotive electronics, and industrial semiconductor devices.
Adopting Trench MOS Barrier Schottky (TMBS) technology, this diode offers a low forward voltage drop of 1.05 volts, which contributes to higher efficiency and reduced heat dissipation.
The device operates over a wide temperature range from -40°C to 175°C, supporting demanding thermal environments, and complies with the automotive standard AEC-Q101, ensuring reliability for automotive use cases.
Compact physical dimensions (6.32 mm length, 6.72 mm width, and 1.4 mm height) facilitate easy integration in PCB layouts where space is critical.
Key electrical specifications include a peak non-repetitive forward surge current of 260 amperes and a low peak reverse current of 40 mA, making it suitable for robust switching and rectifier circuits.
Maximum continuous forward current of 35A for heavy load operation. Peak reverse repetitive voltage rating of 120V suitable for high voltage applications. Low forward voltage of 1.05V improving circuit efficiency. Wide operating temperature from -40°C to 175°C for broad environmental compatibility.
Compact 3-pin TO-252 surface mount package for efficient space usage. Automotive standard AEC-Q101 compliant ensuring high reliability. Trench MOS Barrier Schottky technology enhances performance. Peak surge current tolerance of 260A supports transient conditions.
Single diode configuration optimizes use in discrete semiconductor circuits.
This Vishay Schottky diode is suitable for use in industrial, automotive, power management, and other electronic manufacturing applications needing efficient, robust semiconductor components.
Explore more Schottky diodes and semiconductor solutions at EnvMart to fulfill your design and production requirements with trusted technology components.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of this model is 35 amperes, making it suitable for high current applications.
This diode has a peak reverse repetitive voltage rating of 120 volts, ensuring robust blocking capabilities in high voltage applications.
The forward voltage drop of this unit is 1.05 volts, which contributes to improved efficiency in electronic circuits.
It operates reliably between temperatures of -40°C to 175°C, allowing for use in various thermal environments.
This diode is housed in a TO-252 surface mount package, which is compact and facilitates easy integration into PCB layouts.
The peak non-repetitive forward surge current rating for this diode is 260 amperes, supporting transient conditions in circuits.
It complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.
This model features a pin count of 3, suitable for discrete semiconductor applications.
The peak reverse current for this diode is rated at 40 mA, which is suitable for robust switching applications.
It utilizes Trench MOS Barrier Schottky (TMBS) technology, which enhances performance by reducing forward voltage drop.
The dimensions of this unit are 6.32 mm in length, 6.72 mm in width, and 1.4 mm in height, making it compact for various applications.
This diode is suitable for applications in power supplies, automotive electronics, and industrial semiconductor devices requiring efficient performance.
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