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Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin SOT-666 PEMD10,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 0.6mm
Length 1.7mm
Model PEMD10,115
Width 1.7mm
Mount Type Surface
Series PEMD10
Maximum Operating Temperature 150°C
Package Type SOT-666
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 230MHz

Key Features

  • Designed for surface mount applications in a 6-pin SOT-666 package.
  • Isolated transistor configuration with integrated bias resistors for direct digital drive.
  • Maximum power dissipation is 200 mW, suitable for low power switching.
  • High transition frequency of 230 MHz enabling fast switching performance.
  • Operating temperature range from -65°C to 150°C for reliable operation in varied environments.
  • Compliant with RoHS standards and AEC-Q101 automotive qualification.
  • Minimum DC current gain (hFE) of 100 ensures effective amplification.

Product Description

The Nexperia PEMD10,115 is a high-performance digital transistor designed for use in electronic circuits requiring integrated resistor-equipped bipolar transistors. It incorporates both NPN and PNP transistors with dual digital transistor capability, packaged conveniently in a 6-pin SOT-666 surface mount package.

With a maximum DC collector current rating of 100 mA and maximum collector emitter voltage of 50 V, this component is ideal for switching and amplification tasks in semiconductor discrete applications. The device supports isolated transistor configuration and includes integrated bias resistors, enabling direct interfacing with digital logic without additional components.

The transistor provides a maximum power dissipation of 200 mW and a high transition frequency of 230 MHz, facilitating swift switching cycles and efficient operation in high-frequency environments. Its operational temperature range extends from -65°C to 150°C, making it suitable for various industrial and automotive applications.

Physical dimensions are compact and suitable for high-density PCB layouts, with a length of 1.7 mm, width of 1.7 mm, and a height of 0.6 mm. The device is RoHS compliant and has passed AEC-Q101 automotive standard tests, validating its robustness and reliability for demanding environments.

Designed for surface mount technology with a compact SOT-666 6-pin footprint. Dual resistor digital transistor with NPN + PNP configuration for flexible circuit design. Enables direct drive from digital signals due to integrated resistors.

Wide temperature tolerance and power dissipation ensure durable performance. Compliant with key industry standards including RoHS and AEC-Q101. Ideal for automotive, industrial, and general semiconductor discrete applications.

Explore the full Nexperia Digital Transistor range and related semiconductor components for your electronic designs at EnvMart.

Nexperia Digital Transistor 100 mA NPN + PNP 50 V 6-Pin SOT-666 PEMD10,115
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Frequently Asked Questions

The maximum DC collector current rating for this model is 100 mA.

The maximum collector-emitter voltage (Vceo) is 50 V.

It operates within a temperature range from -65°C to 150°C.

The maximum transition frequency is 230 MHz, enabling fast switching performance.

This model is packaged in a 6-pin SOT-666 surface mount configuration.

The dimensions are 1.7 mm in length, 1.7 mm in width, and 0.6 mm in height.

It features an isolated transistor configuration with integrated bias resistors for direct digital drive.

The minimum DC current gain (hFE) is 100, ensuring effective amplification.

Yes, it is RoHS compliant and has passed AEC-Q101 automotive qualification.

The maximum power dissipation is 200 mW.

This digital transistor is suitable for automotive, industrial, and general semiconductor discrete applications.

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