World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

Infineon CoolMOS P6 N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-247 IPW60R190P6FKSA1

Free Delivery in India | Lowest Global Shipping Charges

Infineon CoolMOS P6 N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-247 IPW60R190P6FKSA1

Name: Infineon CoolMOS P6 N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-247 IPW60R190P6FKSA1
Brand: Infineon
SKU: 184459
Price: 2.75 USD
Availability: InStock



Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	21.1mm
Length	16.13mm
Model	IPW60R190P6FKSA1
Width	5.21mm
Mount Type	Through Hole
Series	CoolMOS P6
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	190mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	151W
Typical Gate Charge Qg @ Vgs	37nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	900mV

Key Features

Rated for a maximum continuous drain current of 20 A ensuring robust current handling capability.
Maximum drain-source voltage of 650 V suitable for high voltage applications.
Enhanced CoolMOS P6 series technology provides low Rds(on) of 190 mΩ for efficient conduction.
Packaged in a 3-pin TO-247 through hole package for easy mounting.
Maximum power dissipation rating of 151 W enabling high power operation.
Wide operating temperature range from -55°C to 150°C for demanding environments.
Typical gate charge of 37 nC at Vgs for fast switching performance.
Forward voltage of 900 mV supports efficient rectification and switching.

Product Description

Infineon IPW60R190P6FKSA1 is a CoolMOS P6 series N-Channel MOSFET designed for power electronics applications requiring high efficiency and reliability. It features a maximum continuous drain current of 20 A and a maximum drain-source voltage of 650 V, making it suitable for power factor correction (PFC), lighting, solar inverters, telecoms, and server power supplies.

This device is housed in a TO-247 three-pin package, supporting through-hole mount technology which facilitates easy integration into various power electronic circuits. The enhancement mode channel provides stable switching with a maximum drain-source resistance (Rds(on)) of 190 mΩ, enabling low conduction losses and improved energy efficiency.

Operational safety is maintained with a high maximum power dissipation of 151 W and a broad operating temperature range from -55°C up to 150°C, ensuring reliable performance under harsh operating conditions. Typical gate charge of 37 nC at the gate-source voltage allows rapid switching, beneficial in high-frequency power conversion.

The forward voltage of 900 mV supports optimal rectification and switching performance. While not automotive certified, this MOSFET meets rigorous industrial-grade standards, suitable for demanding commercial and industrial applications.

The compact physical size of 21.1 mm height, 16.13 mm length, and 5.21 mm width enables integration in space-constrained designs. The CoolMOS P6 family is well-regarded for achieving best-in-class efficiency and power density in power electronic designs.

Rated max continuous drain current of 20 A for robust power handling. 650 V maximum drain-source voltage for high voltage applications. Low Rds(on) of 190 mΩ minimizes conduction losses. High power dissipation rating of 151 W enhances thermal performance.

Wide temperature operational range from -55°C to 150°C. Typical gate charge 37 nC at Vgs enables fast switching. 3-pin TO-247 package supports through-hole mounting. Compact dimensions suited for commercial power devices.

Designed for industrial, laboratory, and commercial electronic applications. Explore more power semiconductor solutions from Infineon in the MOSFET category at EnvMart.