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Infineon N-Channel Power MOSFET 120 A 40 V Enhancement 8-Pin TDSON IAUC120N04S6L012ATMA1

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Infineon N-Channel Power MOSFET 120 A 40 V Enhancement 8-Pin TDSON IAUC120N04S6L012ATMA1

Name: Infineon N-Channel Power MOSFET 120 A 40 V Enhancement 8-Pin TDSON IAUC120N04S6L012ATMA1
Brand: Infineon
SKU: 178271
Price: 1.28 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IAUC120N04S6L012ATMA1
Mount Type	Surface
Series	IAUC
Maximum Operating Temperature	175°C
Package Type	TDSON
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Designed for high-performance automotive and industrial applications.
Surface-mount device with low on-resistance of 0.7 mΩ for efficient operation.
Enhancement mode channel type providing reliable switching performance.
Maximum power dissipation of 81 W ensures robust thermal handling.
Typical gate charge of 80 nC facilitates fast switching with low losses.
Wide operating temperature range from -55°C to 175°C for harsh environments.
Certified RoHS compliant and AEC-Q101 automotive qualified for quality assurance.
Maximum gate-source voltage of 20 V protects against voltage spikes.

Product Description

Infineon IAUC120N04S6L012ATMA1 is a high-current N-Channel Power MOSFET designed for precision and reliability in demanding automotive and industrial electronic circuits. It supports a maximum continuous drain current of 120 A and a drain-source voltage rating of 40 V, housed in a compact 8-pin TDSON surface mount package suitable for high-density PCB layouts.

Featuring an enhancement mode channel, it provides excellent switching capabilities coupled with a low maximum drain-source resistance of 0.7 milliohms, minimizing conduction losses during operation. The typical gate charge of 80 nC allows for quick switching response, which helps improve power efficiency in fast switching applications.

The device operates efficiently over a wide temperature range from -55°C to 175°C, making it ideal for harsh automotive environments. It also carries the stringent AEC-Q101 qualification, ensuring automotive-grade quality and reliability. Infineon's commitment to RoHS compliance underscores this MOSFET as a green product, fulfilling environmental regulations.

Applications include automotive powertrain control modules, DC-DC converters, power management in electric vehicles, and other industrial power electronics requiring high current and voltage capability with robust thermal performance.

High continuous current rating of 120 A supports demanding load conditions. Low on-resistance ensures power efficiency and reduces heat generation. AEC-Q101 certification guarantees suitability for automotive applications.

Wide operating temperature range enhances reliability in extreme conditions. Compact 8-pin TDSON package facilitates space-saving PCB design. Maximum power dissipation of 81 W supports thermal robustness. RoHS compliant for environmental safety compliance.

This Infineon IAUC MOSFET series offers state-of-the-art power transistor solutions for automotive and industrial sectors. Explore related products in the MOSFET category at EnvMart for complementary components and tools.