Infineon N-Channel IGBT 600 V 26 A 130 W TO-220 Package Through Hole Mount IKP15N60TXKSA1

Infineon IKP15N60TXKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial and electronic power applications. Featuring a maximum continuous collector current of 26 A and a collector-emitter voltage of 600 V, this device is engineered for efficient power switching and amplification in demanding environments.

This 3-pin TO-220 package IGBT supports through hole mounting, making it suitable for PCB assembly in various electronic equipment and power control systems. The incorporation of Infineon's TrenchStop™ technology delivers exceptionally low collector-emitter saturation voltage and fast switching characteristics, improving system efficiency and reducing energy losses.

Additional features include a high maximum power dissipation of 130 W, a gate emitter voltage tolerance of up to 20 V, and a wide operating temperature range from -40°C to 175°C. These specifications ensure robust operation under thermal and electrical stresses often encountered in industrial, automotive, and power management applications.

Compliant with JEDEC standards, the IKP15N60TXKSA1 provides assurance of quality and reliable performance. Its optimal balance between switching speed and conduction losses makes it ideal for use in inverters, motor controllers, power supplies, and other high-efficiency power conversion systems.

Engineers and designers can rely on this IGBT for applications requiring high current capacity, voltage rating, and enhanced energy efficiency in a compact, industry-standard package.

Maximum continuous collector current of 26 A ensures stable power handling. Collector-emitter voltage rating of 600 V supports high voltage applications. Power dissipation rated at 130 W for efficient thermal performance.

3-Pin TO-220 packaging enables easy through hole mounting on PCBs. Features TrenchStop technology for low saturation voltage and fast switching. Maximum gate emitter voltage of 20 V allows robust gate drive control. Wide operating temperature range from -40°C to 175°C for reliability in harsh environments.

Complies with JEDEC standards ensuring quality and consistency. Low collector-emitter saturation voltage of 2.05 V reduces conduction losses. Energy rating of 0.81 mJ suits switching and power electronic applications.

This product is suited for industrial, automotive, and electronic power control applications requiring high efficiency and reliable switching performance. Explore more IGBT components and power semiconductor devices at EnvMart for your next design project.